Plasma Etching of Refractory Metals and Semiconductors

Plasma can also be effectively applied for etching layers of silicon doped with refractory or rare metals, semiconductors, or via interconnects made with rare or refractory metals. Some of those etching reactions are illustrated in Table 8-4. These processes normally use fluorine-containing gases as a feedstock and have hexafluorides as volatile etching products. However, chlorine is preferred in some specifle cases. Only the most common plasma etching systems are discussed here much more detail on the subject can be found, particularly in the reviews of Flamm (1989) and Orlikovsky (2000). 

Material to be etehed Feedstock gas Major etching atom Volatile etehing produet 

MICRO-ELECTRONICS AND OTHER PLASMA CLEANING PROCESSES 

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