Oxygen plasma etched

Oxygen pipelines, 47 754 Oxygen plasma etching, of lotus effect surfaces, 22 117, 119 Oxygen pressure, in oxidation reactions, 49 82... 

Recent investigations in the field of plasma etching have almost universally found that surfaces subjected to ion bombardment (e.g., the target surface in Fig. 1) react (i.e., etch) much more rapidly than those which are held near plasma potential. Examples of this type have been reported by Hosokawa et al. for the halocarbon etching of silicon and by Holland and Ojha for the oxygen plasma-etching of carbon. Several systems exhibiting this type of behavior have also been observed in our laboratory . 

The inorganic resist system is unique with respect to optical sensitivity coupled with 02 plasma resistance. Most organic polymers do not possess sufficient plasma etching resistance to withstand oxygen plasma etching of... 

The distribution of sulfate groups on the surface and into the interior of beads sulfonated under conditions to yield sur-ace modification and surface plus interior modification was investigated by oxygen plasma etching (0PE)(55) of beads that were sulfonated in refluxing sulfuric and in cold sulfuric for the same time interval. The cold sulfonation yielded beads sulfonated so minimally that the sulfate group could not be detected by titration while the capacity of the beads sulfonated hot could be titrated as usual. The beads sulfonated cold are labelled surface while the other are labelled normal. The... 

The determination of structure and bonding of polymer anchored catalysts is another area where the insolubility of the materials often precludes solution spectroscopic studies and one is limited to techniques that can be applied to irregular solids (57). In addition, combining oxygen plasma etching and surface analysis allows investigation of the depth of penetration of the metal into the polymer and allows detection of components that require concentration to allow detection. 

Figure 35. Electron spectra as a function of oxygen plasma etching exposure from normally sulfonated beads and surface only sulfonated beads.

Sulfonated Beads as a Function of Oxygen Plasma Etching ... 

Figure 38 illustrates accumulated surface scans in the rhodium 3d and phosphorus 2p region taken from granules of the rhodium anchored catalyst. The surface concentration is low enough that scan accumulation was necessary to detect these elements. These particles were oxygen plasma etched for thirty minutes and Figure 39 includes a survey spectrum as well as Rh 3d and P 2p spectra taken from the sample after OPE. The intensity of the rhodium and phosphorus lines is enhanced considerably as a result of etching. To investigate the depth of penetration of the anchored metal into the surface of the particles, surface spectra were obtained as a function of OPE times. This data is given in Table VIII and the phosphorus and rhodium spectra as a function of etch time in minutes is shown in Figure 40. The intensity of the rhodium and phosphorus lines increases up to twenty minutes of etching or equivalent to penetration of 160 nm into the surface of the particles. This analysis indicates that rhodium is fairly uniformly distributed into the particles at least 160 nm into the interior.

Intensities from oxygen Plasma Etched (OPE) Polymer Anchored... 

Figure 39. Electron spectrum from phosphine anchored rhodium containing catalyst after 30-min exposure to oxygen plasma etching.

Tourovskaia A, Barber T, Wickes BT et al (2003) Micropattems of chemisorbed cell adhesion-repellent films using oxygen plasma etching and elastomeric masks. Langmuir 19(11) 4754-4764... 

Of special interest is impedance of nanoporous honeycomb diamond electrodes [81] whose fabrication was briefly described in Section 2. By oxygen-plasma etching, an ordered structure of vertical pores (60 to 80 mn in diameter, 500 mn deep) was... 

A positive resist silicon-containing polymer, (V), was prepared by Kinsho [4] having a resolution wavelength of less than 300 nm that was resistant to oxygen plasma etching. 

Several years ago, Taylor et al. (2,3) showed that the oxygen plasma-etch resistance of carbon-based polymers could be markedly enhanced by incorporating certain atoms into the polymer chain. Particularly effective were those elements such as silicon or titanium that form a refractory oxide during oxygen RIE. The oxide is formed at the surface of the resist and greatly retards the subsequent etching rate of the remaining resist. 

We previously reported that iodine containing compounds are resistant to oxygen plasma etching, and proposed two-level resist systems utilizing a mixture of iodine compounds and a commercially available positive photoresist(3). However, this resist has low resistance to O -RIE. 

We wish to acknowledge helpful discussions with W. E. Quinn on the mechanism of oxygen plasma etching. 

Plasma Etching. The glow discharge reactor used in oxygen plasma etching of POP film was described previously ( ). The reactor pressure was monitored with a capacitance manometer (MKS... 

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