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Plasma-Chemical Etching Mechanisms and Kinetics

Main Principles of Plasma Etching as Part of Integrated Circuit Fabrication Technology [Pg.510]

Seleetive exposition of the photoresist to fight through a pattern [Pg.510]

Development of the photoresist and removal of the exposed resist regions (this leaves behind a patterned resist mask) [Pg.510]

Transferring the pattern into the film via the etching process (the mask protects the [Pg.511]

See other pages where Plasma-Chemical Etching Mechanisms and Kinetics is mentioned: [Pg.510] [Pg.511] [Pg.513] [Pg.515] [Pg.517] [Pg.519] [Pg.521] [Pg.510] [Pg.511] [Pg.513] [Pg.515] [Pg.517] [Pg.519] [Pg.521] [Pg.255] [Pg.625] [Pg.178] [Pg.44] [Pg.934] [Pg.36] [Pg.934] [Pg.37] [Pg.389] [Pg.777]