Surfaces plasma etching

Coburn J W and Winters H F 1979 Ion- and electron-assisted gas-surface chemistry—an important effect in plasma etching J. Appl. Phys. 50 3189-96... 

The distribution of impurities over a flat sihcon surface can be measured by autoradiography or by scanning the surface using any of the methods appropriate for trace impurity detection (see Trace and residue analysis). Depth measurements can be made by combining any of the above measurements with the repeated removal of thin layers of sihcon, either by wet etching, plasma etching, or sputtering. Care must be taken, however, to ensure that the material removal method does not contaminate the sihcon surface. 

Surface treatment of the composite can have a significant effect on adhesion. Surface treatment enhances one or more of the mechanisms described previously. Wu et al. [15] studied the effects of surface treatment on adhesive bonding for AS-4/APC-2 laminates. They found that the greatest bond strength was achieved from acid etching and plasma etching the composite surface. Table 1 summarizes the various surface treatments that were evaluated. 

A porous surface structure (100 cm ) in the reaction charmel can be generated by an SFg plasma etch process with sibcon nitride masking [12],... 

GL 16] [R 12] [P 15] By a plasma etch process (see description in ]R 12]), a highly porous surface stmcture can be realized which can be catalyst coated [12]. The resulting surface area of 100 m is not far from the porosity provided by the catalyst particles employed otherwise as a fixed bed. In one study, a reactor with such a waU-porous catalyst was compared with another reactor having the catalyst particles as a fixed bed. The number of channels for both reactors was not equal, which has to be considered in the following comparison. 

Oxygen pipelines, 47 754 Oxygen plasma etching, of lotus effect surfaces, 22 117, 119 Oxygen pressure, in oxidation reactions, 49 82... 

A wide spectrum of heterogeneous processes can occur at solid surfaces exposed to a glow discharge (5,25,27). The primary processes of interest in plasma etching (and in plasma deposition) are summarized in Table II i20). These interactions result from the bombardment of surfaces by particles. Although vacuum UV photons and soft x-rays present in the plasma are sufficiently energetic to break chemical bonds, electron and particularly ion bombardment has been found to be the most effective method of promoting surface reactions (25). 

C. Parameter Control At present, the most serious impediment to routine use of plasma etching is the large number of parameters that affect the process. As noted, both gas phase considerations and plasma-surface interactions must be controlled. The problem is illustrated in Figure 7 32). Naturally, if the basic plasma parameters (A, /(e), r) could be con-... 

Figure 8. Configurations for plasma etch reactors, (a) barrel or volume loaded 0)) parallel plate or surface loaded (c) downstream etcher.

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