Plasma dry etching

Evidence from investigations outside the field of catalysis tends to support the more recent model. Specifically, a great deal of work outside of catalysis shows that free radicals are responsible for many etching processes. For example, several studies designed to demonstrate the existence of free radicals show that methylene radicals will cause volatilization of a number of metals. Also, modem research into the mechanism of etching in plasmas (dry etching for integrated... 

The vias are extended down through layers 48, 52 and 53 by using a plasma dry etching process. A wet etching process is then used to smooth the surfaces of the vias. An electrically conductive layer of indium is formed over the photoresist masking layer and within the vias in electrical contact with the region 64 and the input pad 58. The photoresist masking layer and... 

It is interesting to note that this is the ion bombardment that is used in plasma ("dry") etching to promote the anisotropic character of that process, it is also important in the understanding of sputtering phenomena.13... 

The 3-D profile also can be transferred from the photoresist to a substrate such as silicon by plasma dry etching for MEMS and microfluidic applications. 

H. Aida, H. Takeda, N. Aota, S.-W. Kim, K. Koyama, Surface treatment for GaN substrate comparison of chemical mechanical polishing and inductively coupled plasma dry etching. Sens. Mater. 25 (2013) 189—204. 

Figure 9. Schematic representation of the SUPER process A) Exposure and acid catalyst generation. Forward and backscattering during exposure lead to degradation of the image with increasing resist depth B) acid-catalyzed thermal crosslinking step C) gas-phase silylation. Si is only incorporated into unexposed parts of the pattern D) Oj plasma dry etching. Si in top layer acts as etch barrier.

Initial studies of the dry-etch resistance of these resists showed that PFEMA had an etching rate in a CCl plasma (p = 0.2 torr, P = 600 W) about threeotimes lower (i.e. 380 X/min) than that of aluminum (i.e. 1200 A/min). 

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