Plasma etching/cleaning

Applications of CF4, C2F( and NF3 to plasma etching/cleaning in semiconductor industries... 

Preparation of Microelectrode Arrays. The microelectrode arrays used in the work were arrays of microelectrodes each 80 pm long, 2.3pm wide and 0.1 pm thick and 3paced 1.7 pm apart. Fabrication and encapsulation of the microelectrode arrays has been described previously.<14.15.21-22) Prior to use, arrays of microelectrodes were cleaned by an rf 02 plasma etch to remove residual photoresist, followed by cycling the potential of each electrode between -1.5 V... 

Step 2. A dual-armed robot (e g., an Endura VHP robot by Applied Materials) transfers one wafer to the plasma-etch reactor in 20 s. The robot is encased within a transport module that is evacuated to 1 torr. Based upon the Trikon Sigma fxp Deposition Cluster, it is estimated that 35.1 ft2 of 100-level clean room area are required. 

Minimal (Sample on Ground Plane) Plasma Cleaning Plasma Anodization (Oxygen plasma) Plasma Etching Plasma Ashing (Oxygen plasma)... 

Often reports leave out the detailed lithographic steps, the chemical etches, the plasma-etching conditions, cleaning solutions used, and temperature cycles involved. These factors, especially with regard to the reverse leakage current of p-n junctions and Schotlky barriers, may be very significant, but their significance is not known. 

Plasma etching for cleaning the substrates lasts 20 min the nucleation time is 15 min. 1 mhar = 0.76 Torr. 

Plasma for cleaning/etching. http.www.plasmod.eom/ma02001.htm March Instmments Dec. 19, 2001. 

Plasma induced contamination on test silicon substrates using an airlock moimted plasma etching system has proven to be very useful and has been used to develop cleaning methods to remove etchant residue. This system heis also b n used to study plasma-surface interactions in general (46,48,54). 

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