Inductively coupled plasma etch

The structures were etched using a time-multiplexed inductively coupled plasma etch (Figure 3.21). On the back side of such a stmctured silicon wafer holes were... 

Microfabrication involves multiple photolithographic and etch steps, a silicon fusion bond and an anodic bond (see especially [12] for a detailed description, but also [11]). A time-multiplexed inductively coupled plasma etch process was used for making the micro channels. The microstructured plate is covered with a Pyrex wafer by anodic bonding. 

I ICP ICP-RIE ICTS ID IDB IR interstitial inductively coupled plasma etching inductively-coupled-plasma reactive ion etching isothermal capacitance transient spectroscopy inversion domain inversion domain boundary infrared... 

In this report, the fabrication of Si nanodot arrays using niobium oxide nanopillars as an etching mask was performed by an inductively coupled plasma reactive ion etching (ICPRIE). 

Inductively coupled plasma reactive ion etching of Co2MnSi magnetic Aims for magnetic random access memory... 

In this study, the reactive ion etching of Co2MnSi magnetic films with TiN hard mask was investigated in an inductively coupled plasma (ICP) of a Cl2/02/Ar gas mix. The effects of gas concentration on etch characteristics of Co2MnSi films were explored. 

One way to fabricate such a reactor is by deep reactive ion etching (DRIE) with a time-multiplexed inductively coupled plasma etcher (most details on fabrication are given in [77]) [7, 77, 78]. Regions of major importance such as the retainers are etched through to avoid differences in stmctural depth which may cause uneven flow. To generate various channel depths in one design, both front-side and back-... 

The surface concentration of copper before etching (in this case, 179 ppm) could be measured by x-ray photoelectron spectroscopy. Therefore A = 179 ppm and the average concentration (in this case, 140 ppm) can be measured by inductively coupled plasma spectroscopy. The average concentration of copper, C, can be derived as... 

RIE MERIE ICP RIBE ECR CAIBE Reactive ion etching Magnetically enhanced reactive ion etching Inductively coupled plasma Reactive ion beam etching Electron cyclotron resonance Chemically assisted ion beam etching Chemical-physical Chemical-physical Chemical-physical Chemical-physical Chemical-physical Chemical-physical... 

In addition small-scale exposures at 870"C were used to study further the role of water vapour with 20 vol.-% and 30 vol.-% water vapour in air in an alumina tube furnace. Phase morphology was studied with scanning electron microscope (SEM). To distinguish between the glassy and crystalline phases some samples were etched in 2-% HF-solution. Phase composition was determined by a quantitative X-ray diffraction (XRD) analysis based on the internal standard, Cap2, method. The chemical composition of the amorphous phase in the binder was determined locally with EDS analysis in SEM. A bulk chemical analysis of the amorphous phases in binder was performed by Induction Coupled Plasma Mass-Spectrometry (ICP-MS). The samples were crushed powders of as-received and 500 h at water vapour bulk exposed (w) materials. The glassy phase was dissolved in HF-HNO3 solution. Open porosity, apparent and bulk densities of each specimen were determined by Archimedes method before and after the tests. 

FIGURE 52.2 Schematic drawing of both reactive ion etching (RIE) and inductively coupled plasma (ICP) etching systems. In both cases, RF radiation is used to induce a plasma that is subsequently driven to the surface as a result of the charges on the gases coupled to a potential bias on an electrode underneath the substrate. 

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