Plasma etching composites

Surface treatment of the composite can have a significant effect on adhesion. Surface treatment enhances one or more of the mechanisms described previously. Wu et al. [15] studied the effects of surface treatment on adhesive bonding for AS-4/APC-2 laminates. They found that the greatest bond strength was achieved from acid etching and plasma etching the composite surface. Table 1 summarizes the various surface treatments that were evaluated. 

Novel terpolymer compositions containing 4-(di-trifluoromethyl-hydroxymethyl)-1-(di-trifluoromethy)methyl)cyclohexyl] vinylsulfonate have been prepared having excellent transparency, substrate adhesion, and plasma etching resistance. The introduction of perfluoronorbornene resulted polymers that were especially suitable for deep UV lithography. 

Pederson, L.A. Structural compositions of polymers relative to their plasma etch characteristics. J. Electrochem. Soc. 1982, 129 (1), 205-208. 

The Incorporation of metals Into polymer films produced by plasma techniques Is an attractive prospect since It can be envisaged that careful choice of the metal and organic phases, and close control of the overall composition of the product would greatly extend the scope of these plasma polymerized materials In, for example, electrical, magnetic and optical applications. In a previous paper (1) we have outlined a convenient method for the preparation of such materials derived from fluorinated monomers by simultaneous chemical plasma etching and polymerization in the same system. 

SURFACE COMPOSITION OF PLASMA-ETCHED AND UNETCHED POP FILMS BEFORE AND AFTER HEAT TREATMENT... 

Strictly speaking, the dry-process compatibility for a resist is very process dependent, and must be measured for the specific process involved. A general idea of compatibility, however, can be obtained by doing a CF4/O2 plasma etch test vs Si02 and/or PMMA references, and this test has been adopted as a quick screen test for dry-process compatibility for new resists. The relative etch ratios vs these references usually, but not always, remain constant when the process requiring resist masking is changed (e.g., PE to RIE), thus, what is measured is resist compositionally-dependent. 

Apart from the tunable parameters, such as RF power, gas composition and flow, and substrate temperature, several other factors affect the plasma etch rates, including impurities in or on the material to be etched, film stress, loading, elapsed time from the start of the etch, materials present in the plasma chamber, and wear of the electrode. 

The shape of an etched feature depends on a plethora of geometric, material, and plasma parameters. The shape evolution problem is coupled to the plasma reactor through the sheath (Fig. 23, top). Feedback from the feature to the reactor occurs through the flux of product species coming out of the feature and the varying surface area available for reaction as the feature shape evolves. The former affects the plasma gas composition and in turn the flux and energy distribution of species incident on... 

---