Etching ion/plasma

Reactive Ion (PLASMA) Etch Resistance of Photoresist Polymers. 976... 

REACTIVE ION (PLASMA) ETCH RESISTANCE OF PHOTORESIST POLYMERS... 

Anodic Etching Chemical Stain Etching Chemical Vapor Etching Laser-Induced Etching Metal-Assisted Etching Spark Processing Reactive Ion (Plasma) Etching... 

Figure C2.18.3. Relationship between ion-assisted etching and directionality in plasma etching, (a) Demonstration of the synergy between ion bombardment and reactive species during ion-assisted etching, (b) Ions incident on an etched feature. This situation prevails in glow discharges when the feature dimensions are much less than the plasma sheath thickness. Reproduced from [35]...

Coburn J W and Winters H F 1979 Ion- and electron-assisted gas-surface chemistry—an important effect in plasma etching J. Appl. Phys. 50 3189-96... 

Chang J P, Arnold J C, Zau G C H, Shin H-S and Sawin H H 1997 Kinetic study of low energy ion-enhanced plasma etching of polysilicon with atomic/molecular chlorine J. Vac. Sc/. Technol. A 15 1853-63... 

Chemical vapor deposition Plasma etching Photoresist Photolithography Resistance heating Ion implantation Spin-on glass deposition Cathodic arc Ion plating... 

The talk will briefly review some of these developments ranging from high temperature equilibrium plasmas to cool plasmas, PECVD, ion implantation, ion beam mixing and ion assisted etching and deposition. Brief consideration will also be given to sputtering and ionised cluster beam deposition techniques in inorganic synthesis. 

A wide spectrum of heterogeneous processes can occur at solid surfaces exposed to a glow discharge (5,25,27). The primary processes of interest in plasma etching (and in plasma deposition) are summarized in Table II i20). These interactions result from the bombardment of surfaces by particles. Although vacuum UV photons and soft x-rays present in the plasma are sufficiently energetic to break chemical bonds, electron and particularly ion bombardment has been found to be the most effective method of promoting surface reactions (25). 

When ion bombardment occurs in the presence of chemically reactive species (plasma etching), the above problems can be alleviated. It would be... 

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