Silicon 001 surface

Flimpsel F J, McFeely F R, Morar J F, Taleb-lbrahimi A and Yarmoff J A 1990 Core level spectroscopy at silicon surfaces and interfaces Proc. Enrico Fermi School on Photoemission and Adsorption Spectroscopy and Interfaces with Synchrotron Radiation vo course CVIII, eds M Campagna and R Rose (Amsterdam Elsevier) p 203... 

A fonn of anisotropic etching that is of some importance is that of orientation-dependent etching, where one particular crystal face is etched at a faster rate than another crystal face. A connnonly used orientation-dependent wet etch for silicon surfaces is a mixture of KOH in water and isopropanol. At approximately 350 K, this etchant has an etch rate of 0.6 pm min for the Si(lOO) plane, 0.1 pm min for the Si(l 10) plane and 0.006 pm miiG for the Si(l 11) plane [24]. These different etch rates can be exploited to yield anisotropically etched surfaces. 

Dry etching is a commonly used teclmique for creating highly anisotropic, patterned surfaces. The interaction of gas phase etchants with surfaces is of fundamental interest to understanding such phenomena as undercutting and the dependence of etch rate on surface structure. Many surface science studies aim to understand these interactions at an atomic level, and the next section will explore what is known about the etching of silicon surfaces. 

On the atomic level, etching is composed of several steps diflfiision of the etch molecules to the surface, adsorption to the surface, subsequent reaction with the surface and, finally, removal of the reaction products. The third step, that of reaction between the etchant and the surface, is of considerable interest to the understanding of surface reactions on an atomic scale. In recent years, STM has given considerable insight into the nature of etching reactions at surfaces. The following discussion will focus on the etching of silicon surfaces [28]. 

Tom H W K, Heinz T F and Shen Y R 1983 Second-harmonic reflection from silicon surfaces and its relation to structural symmetry Phys. Rev. Lett. 51 1983... 

Chemical reactions of aimnonia with the silicon surface have also been clearly observed using STS [21], where the disappearance of the it and it states characteristic of the clean surface coincides with the fomiation of Si-H antibonding states corresponding to the dissociation of the ammonia on the Si surface. 

Gupta P, Dillon A C, Bracker A S and George S M 1991 FTIR studies of H2O and D2O decomposition on porous silicon surfaces Surf. Sc/. 245 360-72... 

Wang L S, Nicholas J B, Dupuis M, Wu FI and Colson S D 1997 SijO (x = 1-6) models for oxidation of silicon surfaces and defect sites in bulk oxide materials Phys. Rev. Lett. 78 4450... 

The subsequent reaction of tire F atoms witli tire silicon surface leads to tire fonnation of tire volatile product SiF ... 

Barish E L, Vitkavage D J and Mayer T M 1985 Sputtering of chlorinated silicon surfaces studied by secondary ion mass spectrometry and ion scattering spectroscopy J. AppL Phys. 57 1336-42... 

Helmer B A and Graves D B 1998 Molecular dynamics simulations of Ar" and Cl" Impacts onto silicon surfaces distributions of reflected energies and angles J. Vac. Sc/. Technol. A 16 3503-14... 

The silicon surface contains chains of atoms that are formally bonded to just three other atoms. These atoms compensate for the lack of a full valence complement of bonds by tt... 

Antireflection coatings are used over the silicon surface which, without the coating, reflects ca 35% of incident sunlight. A typical coating consists of a single layer of a transparent dielectric material with a refractive index of ca 2, which is between the index of siUcon and ait or cover material. Materials such as titanium dioxide, tantalum pentoxide, Ta20, or siUcon nitride, Si N, ca 0.08-p.m thick are common. The coating and a physically textured... 

The term direct TXRF refers to surface impurity analysis with no surface preparation, as described above, achieving detection Umits of 10 °—10 cm for heavy-metal atoms on the silicon surface. The increasit complexity of integrated circuits fabricated from silicon wafers will demand even greater surfrce purity in the future, with accordingly better detection limits in analytical techniques. Detection limits of less than 10 cm can be achieved, for example, for Fe, using a preconcentration technique known as Vapor Phase Decomposition (VPD). 

The VPD method orignally was developed to determine metal trace impurities on thermally oxidized or bare silicon surfaces in combination with atomic absorp-... 

In nonresonant profiling, the silicon surface barrier detectors that detect the products of the nuclear reaction may also detect signals from incident ions that have been backscattered from the sample. Figure 4 shows an a particle spectrum from the reaction (p, a) along with the signal produced by backscattered... 

As earlier discussed, the dominant factor in the near-surface region is the particle detection system. For a typical silicon surface barrier detector (15-keV FWHM resolution for Fle ions), this translates to a few hundred A for protons and 100— 150 A for Fle in most targets. When y rays induced by incident heavy ions are the detected species (as in FI profiling), resolutions in the near-surface region may be on order of tens of A. The exact value for depth resolution in a particular material depends on the rate of energy loss of incident ions in that material and therefore upon its composition and density. 

Fig. 4.31. Variation of the coefficient of reflection and penetration depth for X-rays of 1.5405 A incident on a perfectly flat silicon surface.

In other materials synthesis applications, the utilization of the strong bonding of fullerenes to clean silicon surfaces, has led to the application of a monolayer... 

Upon application of the silicone by extrusion, moisture in the atmosphere comes into contact with the silicone surface. The hydrolysis of an acetoxy siloxy group of the diacetoxymethylsiloxy-endblocked-PDMS reactive polymer (II) proceeds and leads to a silanol-endblocked polymer as shown in Scheme 7, where OAc represents the acetoxy (CH3COO-) group. 

Fabry-Perot interferometer is an optical resonator consisting of two parallel mirrors. Fabry-Perot interferometers can be made by silicon bulk microma-chining." " Silicon surface micromachining is also a suitable technique for making interferometers for infrared wavelengths. 

In studies on Pt dotted silicon electrodes, PMC measurements revealed that tiny Pt dots increased the interfacial charge transfer compared with bare silicon surfaces in contact with aqueous electrolytes. However, during an aging effect, the thickness of the oxide layer between the silicon and the platinum dots gradually increased so that the kinetic advantage again decreased with time.11... 

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