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Reaction ion etching

Fig. 4.32 Relative reaction ion etch rates of various photoresist polymer candidates. Fig. 4.32 Relative reaction ion etch rates of various photoresist polymer candidates.
The plasma etch rates of the SOG films were determined In an MRC Model 51 RIE parallel plate etcher which had 6 in. diameter electrodes. The electrode spacing was 2 in. and the substrates were placed on the powered electrode which was water cooled. The chamber pressure was about 200 mTorr for plasma etching and 10-15 mTorr for reaction ion etching (RIE). A net total power of 50W was used in each experiment. In contrast to their wet etch behavior, the SOG films etch only slightly faster than thermal Si02 in CF4 + O2 plasmas. This Is so since plasma etch rates are determined to a greater... [Pg.354]

Reaction Ion Etching is another possibility for the development of photolithographically treated surfaces (Figure 10.14). It is based on insulating a silicon wafer by growing a high-quality silicon dioxide (Si02) layer. A semiconductor interface like silicon is often... [Pg.413]

A wide variety of process-induced defects in Si are passivated by reaction with atomic hydrogen. Examples of process steps in which electrically active defects may be introduced include reactive ion etching (RIE), sputter etching, laser annealing, ion implantation, thermal quenching and any form of irradiation with photons or particles wih energies above the threshold value for atomic displacement. In this section we will discuss the interaction of atomic hydrogen with the various defects introduced by these procedures. [Pg.92]

Unimolecular Reactions of Isolated Organic Ions [EtCH=NHMe] and... [Pg.327]

R R Re reff RIE RNG Gas constant Radius of curvature Reynolds number Measured reaction rate Reactive ion etching ReNormalization Group... [Pg.685]

The etch resistance of poly (butene-1 sulfone) in fluorocarbon-based plasmas can be enhanced by prior treatment of the surface in an oxygen plasma. This pretreatment inhibits or retards the depolymerization reaction that characterizes normal etching in fluorocarbon plasmas, thereby permitting formation of a surface-modified layer which exhibits a substantially reduced etch rate. Pretreating PBS in an oxygen plasma enables it to be used subsequently in selective reactive-ion etch processes involving fluorocarbon plasmas to delineate submicron, anisotropically etched patterns. [Pg.317]

Reactive ion etching (RIE) and deep reactive ion etching (DRIE) are common examples of plasma etching. In this incarnation, the substrate to be etched is placed on a powered electrode in a plasma chamber. Process gases are admitted into the chamber and a plasma is struck. Because the substrate is directly in the ion flux of the plasma, the ions impinge on the surface and may participate in chemistry. For example, RIE of polysilicon may use SFs as the reactive gas, and etches the Si by a reaction with fluoride ions fo form fhe volatile product SiF4, as illustrated by Eqs. (4) and (5). ... [Pg.3051]

Reactive ion etching is a combination of the two mechanisms chemical reaction with electrically neutral radicals, which results in nondirectionahty and high selectivity, and physical erosion due to accelerated ions, characterized by anisotropy and nonselectivity. The manner in which they interact varies with the gas/solid... [Pg.79]


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See also in sourсe #XX -- [ Pg.413 ]




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Ion etching

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