Silicone modifications, surface modification techniques, control

Atom manipulation is also possible on the bare i.e. unpassivated) Si(lOO) surface and in Section 3.41 describe a series of recent results from our group at the University of Nottingham which involve the switching of bistable silicon atoms via chemical force alone. This is a very different approach to atomic-level control as compared to the H-depassivation technique atoms are switched between two states via direct modification of a chemical bond (a toggling of bond angle), rather than the injection of tunnelling electrons. 

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