Crystals faces

Studies have been made on the rate of growth of oxide films on different crystal faces of a metal using ellipsometric methods. The rate was indeed different for (100), (101), (110), and (311) faces of copper [162] moreover, the film on a (311) surface was anisotropic in that its apparent thickness varied with the angle of rotation about the film normal. 

Diamond behaves somewhat differently in that n is low in air, about 0.1. It is dependent, however, on which crystal face is involved, and rises severalfold in vacuum (after heating) [1,2,25]. The behavior of sapphire is similar [24]. Diamond surfaces, incidentally, can have an oxide layer. Naturally occurring ones may be hydrophilic or hydrophobic, depending on whether they are found in formations exposed to air and water. The relation between surface wettability and friction seems not to have been studied. 

Certain materials, most notably semiconductors, can be mechanically cleaved along a low-mdex crystal plane in situ in a UFIV chamber to produce an ordered surface without contamination. This is done using a sharp blade to slice tire sample along its preferred cleavage direction. For example. Si cleaves along the (111) plane, while III-V semiconductors cleave along the (110) plane. Note that the atomic structure of a cleaved surface is not necessarily the same as that of the same crystal face following treatment by IBA. 

One of the main uses of these wet cells is to investigate surface electrochemistry [94, 95]. In these experiments, a single-crystal surface is prepared by UFIV teclmiqiies and then transferred into an electrochemical cell. An electrochemical reaction is then run and characterized using cyclic voltaimnetry, with the sample itself being one of the electrodes. In order to be sure that the electrochemical measurements all involved the same crystal face, for some experiments a single-crystal cube was actually oriented and polished on all six sides Following surface modification by electrochemistry, the sample is returned to UFIV for... 

A fonn of anisotropic etching that is of some importance is that of orientation-dependent etching, where one particular crystal face is etched at a faster rate than another crystal face. A connnonly used orientation-dependent wet etch for silicon surfaces is a mixture of KOH in water and isopropanol. At approximately 350 K, this etchant has an etch rate of 0.6 pm min for the Si(lOO) plane, 0.1 pm min for the Si(l 10) plane and 0.006 pm miiG for the Si(l 11) plane [24]. These different etch rates can be exploited to yield anisotropically etched surfaces. 

The work function (p is the energy necessary to just remove an electron from the metal surface in thermoelectric or photoelectric emission. Values are dependent upon the experimental technique (vacua of 10 or torr, clean surfaces, and surface conditions including the crystal face identification). 

From these various examples, it is clear that the adsorption energy for a given kind of site can vary quite markedly from one crystal face of the adsorbent to another. For argon on solid xenon (Table 1.1), for example, the most favourable site has a o value of —1251 x 10" J on the (100) face but only -1072 on the (111) face. Such differences are in no way surprising, and they have been found also with ionic crystals. 

The state of the surface is now best considered in terms of distribution of site energies, each of the minima of the kind indicated in Fig. 1.7 being regarded as an adsorption site. The distribution function is defined as the number of sites for which the interaction potential lies between and (rpo + d o)> various forms of this function have been proposed from time to time. One might expect the form ofto fio derivable from measurements of the change in the heat of adsorption with the amount adsorbed. In practice the situation is complicated by the interaction of the adsorbed molecules with each other to an extent depending on their mean distance of separation, and also by the fact that the exact proportion of the different crystal faces exposed is usually unknown. It is rarely possible, therefore, to formulate the distribution function for a given solid except very approximately. 

The number and kind of defects in a given specimen, as well as the crystal habit and with it the proportion of different crystal faces exposed, will in general depend in considerable degree on the details of preparation. The production of a standard sample of a given chemical substance, having reproducible adsorptive behaviour, remains therefore as much an art as a science. 

If 7 = 0, AT = 0, regardless of particle size. This is not expected, however, since chains emerging from a crystal face either make a highly constrained about-face and reenter the crystal or meander off into the liquid from a highly constrained attachment to the solid. In either case, a free-energy contribution is inescapable. 

Pour-Point Depressants. The pour point of alow viscosity paraffinic oil may be lowered by as much as 30—40°C by adding 1.0% or less of polymethacrylates, polymers formed by Eriedel-Crafts condensation of wax with alkylnaphthalene or phenols, or styrene esters (22). As wax crystallizes out of solution from the Hquid oil as it cools below its normal pour point, the additive molecules appear to adsorb on crystal faces so as to prevent growth of an interlocking wax network which would otherwise immobilize the oil. Pour-point depressants become less effective with nonparaffinic and higher viscosity petroleum oils where high viscosity plays a dominant role in immobilizing the oil in a pour-point test. 

Surface Finish. As well as influencing the rate of metal removal, electrolytes also affect the quality of surface finish obtained in ECM. Depending on the metal being machined, some electrolytes leave an etched finish. This finish results from the nonspecular reflection of light from crystal faces electrochemicaHy dissolved at different rates. Sodium chloride electrolyte tends to produce a kind of etched, matte finish when used for steels and nickel aHoys. A typical surface roughness average, Ra is about 1 ]lni. 

Acoustic Wave Sensors. Another emerging physical transduction technique involves the use of acoustic waves to detect the accumulation of species in or on a chemically sensitive film. This technique originated with the use of quartz resonators excited into thickness-shear resonance to monitor vacuum deposition of metals (11). The device is operated in an oscillator configuration. Changes in resonant frequency are simply related to the areal mass density accumulated on the crystal face. These sensors, often referred to as quartz crystal microbalances (QCMs), have been coated with chemically sensitive films to produce gas and vapor detectors (12), and have been operated in solution as Hquid-phase microbalances (13). A dual QCM that has one smooth surface and one textured surface can be used to measure both the density and viscosity of many Hquids in real time (14). 

Small changes in impurity content did not affect this rate but the presence of water vapor and changes in partial pressure of oxygen were critical (61,62). Steam and various impurities and binders also affect the oxidation of siUcon carbide (63). Differences have been observed in oxygen adsorption on the different SiC crystal faces (64). 

It is emphasized that the delta L law does not apply when similar crystals are given preferential treatment based on size. It fails also when surface defects or dislocations significantly alter the growth rate of a crystal face. Nevertheless, it is a reasonably accurate generahzation for a surprising number of industrial cases. When it is, it is important because it simphfies the mathematical treatment in modeling real crystallizers and is useful in predicting crystal-size distribution in many types of industrial crystallization equipment. 

Adsorbed molecules are more strongly held at the sites where the weakest metal-metal bonding is to be found, and these conespond to the active sites of Langmuir. A demonstration of this effect was found in smdies of the adsorption of H2S from a H2S/H2 mixture on a single crystal of copper of which die separate crystal faces had been polished and exposed to die gas. The formation of copper sulphide first occuiTed on die [100] and [110] planes at a lower H2S partial pressure dran on die more densely packed [111] face. Thus die metal atoms which are less strongly bonded to odrer metal atoms can bond more strongly to die adsorbed species from die gas phase. 

Erist chen, n. Uttle crystal. Kristall-chloroform, n. chloroform of crystallization. -druse, /. crystal druse, crystal cluster. -ebene, /. crystal plane, crystal face, -ecke,/. (solid) crystal angle, kristallelektrisch. a. piezoelectric, kristallen, a. crystalline. 

Kristall-fabrik, /. glass works, -feuchtigkeit, /. crystalline humor (vitreous humor), -flache, /. crystal face. 

The mesomorphous phase, also called an intermediate phase or a mesophase, is formed by molecules occurring in surface layers of the crystallites. It can be assumed that the mesophase is made up largely by regularly adjacent reentry folds. However, it cannot be excluded that the mesophase is also composed of some irregular chain folds, which are characterized by a long length and run near the crystal face in the direction perpendicular to the microfibril axis. 

In recent years there is a growing interest in the study of vibrational properties of both clean and adsorbate covered surfaces of metals. For several years two complementary experimental methods have been used to measure the dispersion relations of surface phonons on different crystal faces. These are the scattering of thermal helium beams" and the high-resolution electron-energy-loss-spectroscopy. ... 

Using single crystals it has been shown that different low-index crystal faces see Section 20) exhibit different corrosion rates. However, the relative corrosion rate of the different faces varies with the environment and these structural effects are of little practical significance. On the other hand, the fact that polycrystal grains of different crystallographic orientation may corrode at different rates, is of some importance. 

In uniform corrosion the superficial or geometrical area of the metal is used to evaluate both the anodic and cathodic current density, although it might appear to be more logical to take half of that area. However, surfaces are seldom smooth and the true surface area may be twice to three times that of the geometrical area (a cleaved crystal face or an electropolished single crystal would have a true surface area that approximates to its superficial area). It follows, therefore, that the true current density is smaller than the superficial current density, but whether the area used for calculating /, and... 

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