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Silicon oxidation surface-cleaning effects

More recently, Gould and Irene (96) studied surface-cleaning effects on the oxidation of silicon wafers for oxide thicknesses up to 4300 A. They found... [Pg.323]

The surface condition—whether a native oxide is present or not— has a significant effect on bonding of iron and copper deposited on the surface and thus the cleaning efficiency. Each metal has its own characteristic chemical state. Metal impurity such as Fe tends to be present on the silicon surface oxide layer in the form of oxidized Fe(III), whereas Cu tends to bond directly to Si atoms in the elemental state. The former can be cleaned by etching away the oxide whereas the latter can only be removed by a redox reaction. [Pg.344]

See other pages where Silicon oxidation surface-cleaning effects is mentioned: [Pg.502]    [Pg.349]    [Pg.287]    [Pg.322]    [Pg.191]    [Pg.295]    [Pg.342]    [Pg.800]    [Pg.322]    [Pg.247]    [Pg.531]    [Pg.77]    [Pg.3864]    [Pg.10]    [Pg.1924]    [Pg.88]    [Pg.491]    [Pg.79]    [Pg.373]    [Pg.184]    [Pg.141]    [Pg.160]    [Pg.60]    [Pg.477]    [Pg.212]    [Pg.4]    [Pg.247]    [Pg.267]    [Pg.24]    [Pg.36]    [Pg.67]    [Pg.79]    [Pg.123]    [Pg.331]    [Pg.340]    [Pg.325]    [Pg.155]    [Pg.234]    [Pg.418]    [Pg.89]    [Pg.349]    [Pg.219]    [Pg.504]    [Pg.505]    [Pg.3867]    [Pg.6335]    [Pg.6349]    [Pg.351]   
See also in sourсe #XX -- [ Pg.314 ]



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7-Silicon effect

Cleaning effectiveness

Oxidation silicon surface

Oxidation silicones

Oxides silicon oxide

Oxidized silicon

Silicon oxidation

Silicon oxides

Silicon surface

Surface cleaning

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