Silicon surface morphology

X. H. Xia, C. M. A. Ashruf, P. J. French, and J. J. Kelly, Galvanic cell formation in silicon/metal contacts The effect on silicon surface morphology, Chem. Mater. 12, 1671, 2000. 

Formation of PS is due to preferential dissolution of a silicon surface the rate is larger at some areas of the surface relative to others. Such relative rates with respect to the spatial position of the areas, on which these processes occur, are determined more by the relative nature and less by the absolute nature of the physical and chemical dimensions and events. Specifically, the relative nature of the following aspects is important in determining the morphology of PS ... 

It was found that dendrimer monolayers formed on a silicon surface by all amine-terminated generations are very smooth and homogeneous, with very light, grainy surface morphologies, Figure 12.7(a). The thickness of dendrimer monolayers was measured by the AFM technique from occasional holes in the... 

The morphology of alkaline-etched (100) and (110) silicon surfaces varies from rough surfaces that exhibit micron-sized pyramids or ridges [Sc5] to smooth orange peel-like surfaces, depending on the etchant composition and substrate doping density. Mirror-like surfaces can be obtained on (111) crystal planes. 

Finally, Wenas et al. [72] also proposed a two-step LP-CVD process in order to smoothen the too sharp surface morphology of as-grown LP-CVD ZnO by depositing a thin layer of flat LP-CVD ZnO layer grown with DEZ/ethanol/H20 reactant. By varying the thickness of both layers, various surface morphologies have been obtained, which can be suitable for thin film silicon solar cell deposition. 

Results of investigations of vanadium dioxide thin films obtained by the electron-beam evaporation method are considered. Structural and surface morphology of VO., thin films on silicon substrates are presented. Analysis of electrical characteristics of the studied samples is given. A hysteresis of temperature dependences of capacitance and resistance, as well as the phase transition at 58 °C are obtained. 

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