Electron-beam lithography systems

Fluorinated polyimide (PMDA/TFDB) and nonfluorinated polyimide (PMDA/DMDB) films prepared on a silicone substrate were introduced into an electron beam lithography system and subsequently exposed for square patterns (4x4 mm). The electron beam energy was 25 keV the beam current was 10 nA, and the beam dose was 300-1500 pC/cm. The 4x4 mm square was written by a 0.1-pm-wide electron beam. 

Characteristics. Electron-beam exposure experiments were carried ut by using a prototlype HL-600 Hitachi Electron-Beam Lithography System which is a vector scanning type variable-shaped electron-beam machine. The acceleration voltage was 30 kV. Resist films were formed on silicon wafers by spin-coating and prebaked at 80 C for 20 min before exposure. 

Cross sections of the 2-layer and 4-layer devices are shown in Fig. 16.9 (a) and (b), respectively. Our samples were prepared by an Electron Beam Lithography system. The exposure was carried out for 2 psec by a pixel map of 60000x60000 dots to give a total exposure area of 1.2x 1.2 mm. Next, SO nm of organic Alq3 and subsequent 20 nm of gold were deposited on the grating by a thermal evaporator with vacuum level and evaporation rate of approximately 2 10" Torr and 0.2 A/s, respectively. 

Molhave K, Madsen DN, Boggild P. A simple electron-beam lithography system. Ultramicroscopy 2005 102 215-9. 

Itoh, H. Tadokoro, Y. Sohda, Y. Nakayama, and N. Saitou, Cell projection colunm for high speed electron beam lithography system, J. Vac. Sci. Technol. BIO, 2799 (1992). 

The following section reviews the field emission process and various field emission applications in which CNTs have found particular recognition, including displays, microwave and X-ray sources, parallel electron beam lithography systems, gas ionization sensors, and interstellar propulsion. 

Teo KBK, ChhowaUa M, Amaratunga GAJ, Milne WI, Legagneux P, Pirio G, et al. Fabrication and electrical characteristics of carbon nanotube-based microcathodes for use in aparaUel electron-beam lithography system. J Vac SciTechnolB 2003 21 693-7. 

The TSPS resist was exposed using an electron beam lithography system (Elionix ELS-3300,30 kV) and a KrF exdmer laser stepper (248 nm, NA = 0.3. The e q)osed resists were spin-developed in alcohol mixture solvents. 

As a consequence one might expect that the future needs to rely on hybrid elements which arise from advanced UV-and electron-beam lithography, from imprint techniques or automated and parallelized nanomanipulation techniques, like dip-pen lithography or focused ion-beam techniques in combination with supramolecular approaches for the assembly of molecular inorganic/organic hybrid system. Nevertheless, it is evident for any kind of chemical approach that falling back onto the present-day... 

An alternative is to use electron beam lithography, whose basic resolution is of order 4 A. However, e-beam lithography is a serial addressing system, rather than a parallel system, so that we must write a 2D image as a series of lines, rather than a 2D pattern, and this takes a much longer time. 

New promising technologies for future electron-beam lithography applications based on pyroelectrically induced electron emission from LiNbOs ferroelectrics [22] were recently proposed [23], The developed system possessing micrometer scale resolution used 1 1 electron beam projection. The needed electron pattern was obtained by means of deposited micrometer-size Ti-spots on the polar face of LiNbOs. Another solution for the high resolution electron lithography may be found in nanodomain patterning of a ferroelectric template. 

Particularly in 2D systems, control over the self-assembly of colloidal templates has offered a versatile way to produce patterned surfaces or arrays with a precision of few nanometres. Diblock copolymer micellar nanolithography (dBCML) is a versatile method that uses homopolymers or block copolymers for the production of complex surface structures with nanosized features [69], In contrast to other approaches like electron-beam lithography (EBL) and photolithography, dBCML does not require extensive equipment. In fact, it is commonly used in the fabrication of data storage devices and photonic crystals, in catalyses [70], and for the design of mesoporous films and nanoparticle arrays [71]. 

Microstructured patterns of PMMA on gold films were generated by electron beam lithography (LEO Gemini DSM 982, and electron beam lithographic system ELPHY, Zeiss Germany). The development process was carried out according to standard procedures. In a first step, the quality of microstructure was probed by SEM. 

---