Projection electron beam lithography

Laser ablation microprobe mass spectroscopy Low energy electron beam projection lithography Line edge roughness Maleic anhydride Methacrylic acid... 

Preliminary experiments with electron-beam writing and ion-beam projection lithography have demonstrated that the S-layer may also be patterned by these techniques in the sub-lOO-nm range (nnpnblished resnlts). The combination of ion-beam projection lithography and S-layers as resist might become important in the near fntnre, since ion beams allow the transfer of smaller featnres into S-layer lattices compared to optical lithography. 

New promising technologies for future electron-beam lithography applications based on pyroelectrically induced electron emission from LiNbOs ferroelectrics [22] were recently proposed [23], The developed system possessing micrometer scale resolution used 1 1 electron beam projection. The needed electron pattern was obtained by means of deposited micrometer-size Ti-spots on the polar face of LiNbOs. Another solution for the high resolution electron lithography may be found in nanodomain patterning of a ferroelectric template. 

Scattering angular-limited projection electron beam lithography... 

Itoh, H. Tadokoro, Y. Sohda, Y. Nakayama, and N. Saitou, Cell projection colunm for high speed electron beam lithography system, J. Vac. Sci. Technol. BIO, 2799 (1992). 

Hollenshead and L. Klehanoff, Modeling extreme ultraviolet/H20 oxidation of ruthenium optic coatings, J. Vac. Sci. Technol. B 24,118 130 (2006) Y. Gomei, H. Takase, T. Aoki, Y. Kakutani, and M. Niihe, Scaling law in acceleration test of extreme ultraviolet lithography projection optics mirror contamination, J. Vac. Sci. Technol. B 23, 2848 2851 (2005) A.N. Broers, W.W. Molzen, J.J. Cuomo, N.D. Wittels, Electron beam fabrication of 80A metal structures, Appl. Phys. Lett. 29, 596 598 (1976). 

J.A. Liddle and S.D. Berger, High throughput projection electron beam lithography employing SCALPEL, Proc. SPIE 2014, 66 76 (1993) L.R. Harriot, SCALPEL Projection electron beam lithography, Proc. 1999 Particle Accelerator Conference, New York, pp. 595 599 (1999). 

L.R. Harriot, SCALPEL Projection electron beam lithography, Proc. 1999 Particle Accelerator Conference, New York, pp. 595 599 (1999). 

Liddle, L.R. Harriot, A.E. Novembre, and W.K. Waskiewicz, SCALPEL a projection electron beam approach to sub optical lithography, http //www.bel labs.com/proJect/SCALPEL. Levinson, Principles of Lithography, 2nd ed., p. 396, SPIE Press, Bellingham, WA (2005). 

The principle of maskless ion projection lithography is illustrated in Fig. 15.10. A hroad ion beam is used to illuminate a programmable aperture plate with thousands of apertures of micrometer-scale dimensions, generating up to 4000 beams. In the vicinity of the apertures are tiny deflection plates, each of which can be individually controlled with the aid of integrated CMOS electronics. The slightly deflected beams are blocked at the stopping plate, and the nondeflected... 

Sohda, Y., Ohta, H., Murai, F. et al. 2003. Recent progress in cell-projection electron-beam lithography. Microelectronic Engineering 67-68 78-86. 

It is clear that the progress in VLSI technology is closely linked to lithographic techniques, as the size of the circuit decreases, the speed and the power consmnption decreases. These techniques are dependent on the photochemistry and the resists. The minimum linewidth permitted is already around 0.1 pm or less with sources like electron-beam, X-rays or the 193 nm excimer laser. No doubt these limits will progress and one already speaks of 157 nm projection lithography. The requirements placed on photoresists will probably increase in the near future. 

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