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Electron beam lithography tunnelling

Marrian C R K, Perkins F K, Brandow S L, Koloski T S, Dobisz E A and Calvert J M 1994 Low voltage electron beam lithography in self-assembled ultrathin films with the scanning tunneling microscope Appi. Rhys. Lett. 64 390... [Pg.319]

On detailed electrical characteristics of a SET transistor utilizing charging effects on metal nanoclusters were reported by Sato et al. [26]. A self-assembled chain of colloidal gold nanoparticles was connected to metal electrodes, which were formed by electron-beam lithography. The cross-linking of the particles as well as their connection to the electrodes results from a linkage by bifunctional organic molecules, which present the tunnel barriers. [Pg.113]

In contrast to electron-beam lithography, the mechanism of STM lithography is generally an inelastic electron tunneling process, with energy quanta of an electron volt. STM can also be used for single-atom or single-molecule manipulations for the fabrication of individual nanostructures. [Pg.1065]

M Aoyagi, A Shoji, S Kosaka, F Shinoki, S Takada. Fabrication of submicron Josephson tunnel junctions by electron beam lithography. Extended Abstracts of International Superconducting. Electronics Conference, Tokyo, 1987, pp 222-225... [Pg.302]

See other pages where Electron beam lithography tunnelling is mentioned: [Pg.239]    [Pg.112]    [Pg.349]    [Pg.350]    [Pg.106]    [Pg.1357]    [Pg.370]    [Pg.421]    [Pg.219]    [Pg.333]    [Pg.109]    [Pg.247]    [Pg.209]    [Pg.254]    [Pg.209]    [Pg.65]    [Pg.165]    [Pg.253]    [Pg.388]    [Pg.203]    [Pg.219]    [Pg.663]    [Pg.56]    [Pg.64]   
See also in sourсe #XX -- [ Pg.282 , Pg.283 ]



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