Big Chemical Encyclopedia

Chemical substances, components, reactions, process design ...

Articles Figures Tables About

Electron beam lithography transfer

The LB film depositions were performed using a Joyce-Loebl Langmuir Trough IV equipped with a microbalance for measurement of the surface pressure by the Wilhelmy plate method. Filtered deionized water with a pH of 7 was used for the subphase. For the electron beam lithography study, PMMA was spread on the water surface from a dilute benzene solution ( 10 mg PMMA in 20 ml benzene). The novolac/PAC mixtures were spread from solutions ( 20 mg solids in 10 ml solvent) of isopropyl acetate. For the fluorescence studies, the PMMA/PDA mixture was spread on fee water surface from a dilute benzene solution (1.75 mg PDA and 8.33 mg PMMA in 20 ml benzene). Prior to compression, a 20 min interval was allowed for solvent evaporation. The Langmuir film was compressed to the desired transfer pressure at a rate of 50 cm2/min, followed by a 20 minute equilibration period. The Cr-coated silicon wafers and quartz wafers were immersed into fee subphase before... [Pg.351]

Ferromagnetic rings are also fabricated by using electron-beam lithography with a lift-off process for pattern transfer [76]. These nanoscale ferromagnetic rings have a smallest outer diameter of 90 nm, inner diameter of 30 nm and thickness of 10 nm. [Pg.286]

Dip-pen lithography, SAM, hot embossing, nanoimprint lithography, electron beam lithography, dry etching, and reactive ion etching are techniques that can be used to prepare nanostructures with 50-70 nm dimensions. Nanomechanical techniques include processes that involve local transfer of material from a tool onto a substrate when either the tool or the substrate is prestructured. [Pg.152]

More details on fused silica mold fabrication can be found elsewhere [80]. In general, a resist is patterned using electron-beam lithography and then transferred to a thin (between 8 and 20 nm) chromium layer with a CI2/O2 plasma. Afterwards, fused silica is etched in a fluorocarbon plasma using the chromium layer as a hard mask. Finally, this hard mask is removed in a wet or dry process. [Pg.17]


See other pages where Electron beam lithography transfer is mentioned: [Pg.188]    [Pg.328]    [Pg.352]    [Pg.2]    [Pg.11]    [Pg.189]    [Pg.47]    [Pg.65]    [Pg.93]    [Pg.229]    [Pg.91]    [Pg.159]    [Pg.122]    [Pg.7]    [Pg.1792]    [Pg.103]    [Pg.81]    [Pg.480]    [Pg.7]    [Pg.512]    [Pg.714]    [Pg.1070]    [Pg.220]    [Pg.183]    [Pg.10]    [Pg.34]    [Pg.1061]    [Pg.561]    [Pg.593]    [Pg.4328]    [Pg.3602]    [Pg.3603]    [Pg.3608]    [Pg.1261]    [Pg.453]    [Pg.645]    [Pg.320]    [Pg.206]    [Pg.50]    [Pg.46]    [Pg.82]   
See also in sourсe #XX -- [ Pg.94 , Pg.173 , Pg.269 , Pg.307 , Pg.311 , Pg.312 , Pg.319 , Pg.320 , Pg.321 , Pg.322 , Pg.337 , Pg.566 ]




SEARCH



Electron beam

Electron lithography

Lithography electron beam

© 2024 chempedia.info