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Beam technique

Each technique will now be discussed in turn, with particular attention to possible sources of error in the experimental measurement, the necessary control experiments, the deduction of a rate parameter from the raw data, and the significance of the rate parameter so obtained. [Pg.125]

one of the first beam techniques to be developed at low energy only a decade ago, has been extensively employed. Mass and energy selection ensure a well-defined reactant ion beam with good intensity but without state selection. Indeed, the participation of excited states is well illustrated by Lindholm s work. The serious limitation for cross-section measurement is the uncertain collection efficiency of the product ions, since they are extracted in a direction perpendicular to the incident ion beam. Such a technique discriminates strongly against ions formed with appreciable momentum since this is perpendicular to the path of the ion through the analyzing mass spectrometer. [Pg.125]

The major application of this technique, principally by Lindholm and co-workers (see Chapter 10), has capitalized on the above limitation in a study of charge-transfer processes, where the products may exhibit a thermal energy distribution. Even in this application, cross sections are difficult to obtain because the sampling volume is not well defined. Lindholm has been careful to quote only Q values which are estimates of the relative reaction efficiencies. There is another reason why any such cross section so measured may be unreliable. It is plausible, and indeed it has recently been demonstrated, that charge-transfer reactions may yield some products which are forward-scattered in the laboratory framework these would result from collisions with small impact parameters. To the extent that these products will not be detected in a transverse tandem machine, the measured cross section will be underestimated. [Pg.125]

There is one type of transverse tandem machine to which these limitations may not apply—the pulsed machine with a time-of-flight second stage, developed by Lehrle et In that case, the extraction field is [Pg.125]

The Cerm k-Herman technique, which ingeniously reproduces the capabilities of a transverse tandem machine within the compass of a traditional mass-spectrometer ion source, is not suited for the measurement of excitation functions. This is a consequence of the large energy dispersion of the reactant ions, determined by the voltage between the ionization chamber and the electron trap. [Pg.126]


Therefore it is reasonable to prepare already the data acquisition for a three dimensional evaluation in cone-beam-technique by means of two-dimensional detectors. The system is already prepared to integrate a second detector- system for this purpose. An array of up to four flat panel detectors is foreseen. The detector- elements are based on amorphous silicon. Because of the high photon energy and the high dose rates special attention was necessary to protect the read-out electronics. Details of the detector arrangement and the software for reconstruction, visualisation and comparison between the CT results and CAD data are part of a separate paper during this conference [2]. [Pg.586]

Electron Beam Techniques. One of the most powerful tools in VLSI technology is the scanning electron microscope (sem) (see Microscopy). A sem is typically used in three modes secondary electron detection, back-scattered electron detection, and x-ray fluorescence (xrf). AH three techniques can be used for nondestmctive analysis of a VLSI wafer, where the sample does not have to be destroyed for sample preparation or by analysis, if the sem is equipped to accept large wafer-sized samples and the electron beam is used at low (ca 1 keV) energy to preserve the functional integrity of the circuitry. Samples that do not diffuse the charge produced by the electron beam, such as insulators, require special sample preparation. [Pg.356]

There are, however, continuing difficulties for catalytic appHcations of ion implantation. One is possible corrosion of the substrate of the implanted or sputtered active layer this is the main factor in the long-term stabiHty of the catalyst. Ion implanted metals may be buried below the surface layer of the substrate and hence show no activity. Preparation of catalysts with high surface areas present problems for ion beam techniques. Although it is apparent that ion implantation is not suitable for the production of catalysts in a porous form, the results indicate its strong potential for the production and study of catalytic surfaces that caimot be fabricated by more conventional methods. [Pg.398]

P. Hansen and H. Heitmann, "Media foi Eiasable Magnetooptic Recoiding. IEEE Trans. Mag. 25(60 J. M. E. Haipei, "Ion Beam Techniques ia Thin Eihn Deposition," Solid State Technol, 129 (Api. 1987). [Pg.397]

Overall a customer needs to know under what circumstances it is best to use either the electron-beam techniques of EDS and WDS or the X-ray technique of XRF for an analysis problem. If both are equally available, the choice usually resides in whether high spatial resolution is needed, as would be obtained only with electron-beam techniques. If liquids are to be analyzed, the only viable choice is XRF. If one s choice is to use electron-beam methods, the further decision between EDS and WDS is usually one of operator preference. That is, to commence study on a totally new sample most electron-beam operators will run an EDS spectrum first. If there are no serious peak overlap problems, then EDS may be sufficient. If there is peak overlap or if maximum sensitivity is desired, then WDS is usually preferred. Factored into all of this must be the beam sensitivity of the sample, since for WDS analysis the beam current required is lO-lOOx greater than for EDS. This is of special concern in the analysis of polymer materials. [Pg.133]

The classical approach for determining the structures of crystalline materials is through diflfiaction methods, i.e.. X-ray, neutron-beam, and electron-beam techniques. Difiiaction data can be analyzed to yield the spatial arrangement of all the atoms in the crystal lattice. EXAFS provides a different approach to the analysis of atomic structure, based not on the diffraction of X rays by an array of atoms but rather upon the absorption of X rays by individual atoms in such an array. Herein lie the capabilities and limitations of EXAFS. [Pg.222]

Neutron reflectivity provides a depth resolution of 1 nm and fills an important gap in the resolution between X-ray photoelectron spectroscopy and ion-beam techniques. In this regard, neutron reflectivity promises to play a decisive role in the investigation of solid materials. Equally important is the fact that reflectivity meas-... [Pg.669]

As NRA is sensitive only to the nuclei present in the sample, it does not provide information on chemical bonding or microscopic structure. Hence, it is often used in conjunction with other techniques that do provide such information, such as ESCA, optical absorption. Auger, or electron microscopy. As NRA is used to detect mainly light nuclei, it complements another accelerator-based ion-beam technique, Rutherford backscattering (RBS), which is more sensitive to heavy nuclei than to light nuclei. [Pg.681]

It can be welded by resistance, tungsten-inert gas (TIG), plasma arc and electron beam techniques. To protect the metal from attack by air, resistance welding is carried out under water and the TIG method is best performed in a chamber of argon. The latter three methods produce ductile welds that equal the base metal in most of its characteristics. [Pg.854]

Furthermore, LandS s theory only represents a first-order approximation, and the L and S quantum numbers only behave as good quantum numbers when spin-orbit coupling is neglected. It is interesting to note that the most modem method for establishing the atomic ground state and its configuration is neither chemical nor spectroscopic in the usual sense of the word but makes use of atomic beam techniques (38). [Pg.15]

While electron or ion beam techniques can only be applied under ultra-high vacuum, optical techniques have no specific requirements concerning sample environment and are generally easier to use. The surface information which can be obtained is, however, quite different and mostly does not contain direct chemical information. While with infra-red attenuated total reflection spectroscopy (IR-ATR) a deep surface area with a typical depth of some micrometers is investigated, other techniques like phase-measurement interference microscopy (PMIM) have, due to interference effects, a much better surface sensitivity. PMIM is a very quick technique for surface roughness and homogeneity inspection with subnanometer resolution. [Pg.367]

Molecular beam techniques provide powerful tools for investigating ion-molecule reactions. The angular dependence of cross-sections gives direct insight into the physical nature of the reaction complex. Turner, Fineman and Stebbings (64) have shown that the reaction... [Pg.134]

TOF-SIMS was pioneered by Professor Benninghoven and his group in the early 1980s [109], originally developed in static mode and applied for the chemical analysis (elemental as well as molecular) of the uppermost monolayer of solid surfaces [110]. By the introduction and further development of the dual beam technique, the TOF-SIMS can... [Pg.32]

As a consequence one might expect that the future needs to rely on hybrid elements which arise from advanced UV-and electron-beam lithography, from imprint techniques or automated and parallelized nanomanipulation techniques, like dip-pen lithography or focused ion-beam techniques in combination with supramolecular approaches for the assembly of molecular inorganic/organic hybrid system. Nevertheless, it is evident for any kind of chemical approach that falling back onto the present-day... [Pg.125]

Principles and Characteristics The ion-molecule reaction (IMR) ionisation method belongs to the group of ion beam techniques. The basic structure of these instruments consists of ... [Pg.366]

PIXE has been compared to other focusing X-ray beam techniques [292]. Although the measurement part of PIXE and EDXRF is exactly the same, the spectra... [Pg.640]

PIXE has also been used for pigment analysis in furniture and interior painting [301a], The growing use of piPIXE and associated beam techniques in art and archaeometry is noticeable [302,303], Even delicate materials such as paper and parchment are unaffected by microbeams. [Pg.642]

If thick samples are placed in the specimen chamber for analysis, the particles are slowed down and eventually stopped in the sample, so the calculation of the X-ray yield and their absorption is more complicated. Some objects may be too large to be placed in the specimen chamber, in which case the external beam technique is employed. The particle beam passes through a window at the end of the beam-line into the air where an object of any size (e.g. an archaeological artefact) may be analyzed. [Pg.101]

The advancement of the application of lasers in combination with the molecular beam technique has made a great impact in the understanding of primary photodissociation processes. For state-specific detection of small fragments, laser-induced fluorescence, multiphoton ionization, and coherent laser scattering have provided extremely detailed information on the dynamics of photodissociation. Unfortunately, a large number of interesting... [Pg.163]

Ion-molecule radiative association reactions have been studied in the laboratory using an assortment of trapping and beam techniques.30,31,90 Many more radiative association rate coefficients have been deduced from studies of three-body association reactions plus estimates of the collisional and radiative stabilization rates.91 Radiative association rates have been studied theoretically via an assortment of statistical methods.31,90,96 Some theoretical approaches use the RRKM method to determine complex lifetimes others are based on microscopic reversibility between formation and destruction of the complex. The latter methods can be subdivided according to how rigorously they conserve angular momentum without such conservation the method reduces to a thermal approximation—with rigorous conservation, the term phase space is utilized. [Pg.26]


See other pages where Beam technique is mentioned: [Pg.705]    [Pg.800]    [Pg.1264]    [Pg.2409]    [Pg.134]    [Pg.122]    [Pg.356]    [Pg.399]    [Pg.321]    [Pg.927]    [Pg.37]    [Pg.529]    [Pg.592]    [Pg.596]    [Pg.109]    [Pg.77]    [Pg.366]    [Pg.374]    [Pg.48]    [Pg.341]    [Pg.33]    [Pg.224]    [Pg.107]    [Pg.224]    [Pg.368]    [Pg.465]    [Pg.72]    [Pg.296]    [Pg.2]    [Pg.534]   
See also in sourсe #XX -- [ Pg.171 ]




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Analytical techniques electron beam

Atomic-beam technique

Beam Depth Profiling Techniques and Applications

Beam foil technique

Beam studies using radiotracer techniques

Beam technique applications

Beam technique description

Beam techniques mass-spectrometric

Beam techniques merged

Beam test technique

Beam-laser technique

Beam-probe techniques

Beams crossed-beam technique

Chevron-notched beam technique

Clusters beam techniques

Cross-beam technique

Crossed beam technique

Crossed molecular beam technique

Crossed molecular beam technique Crystal

Crossed molecular beam technique structure

Double beam technique

Effusive beam technique

Electron beam evaporation techniques

Electron beam modulation techniques

Electron beam sputtering technique

Electron-beam techniques

Electron-beam-induced CD shrink techniques

Energetic beam analytical techniques

Focused ion beam technique

Focused-beam techniques

Guided ion beam technique

Hydrogen in Semiconductors Ion Beam Techniques

Ion beam techniques

Laser-beam deflection technique

Line-focus-beam technique

Molecular beam deposition technique

Molecular beam epitaxy technique

Molecular beam technique

Nozzle beam techniques

Optical beam bending technique

Optical beam techniques

Particle-Beam Techniques

Photothermal beam deflection spectroscopy technique

Picosecond beam technique

Positron beam technique

Probe Beam Deflection Technique (PBD)

Probe beam deflection technique

Resonant-beam-test technique

Seeded beam technique

Vacuum deposition techniques electron beam evaporation

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