Molecular beam deposition technique

SR Forrest, Ultrathin organic films grown by organic molecular beam deposition and related techniques, Chem. Rev., 97 1793-1896, 1997. 

We illustrate the molecular dynamics technique by application to the ion beam deposition technique. Molecular dynamics could be used to investigate the effect of deposition conditions on the microstructure of the growing film. The microstructural characteristics of interest include film roughness and porosity. 

For polymer film preparation, especially for the investigation of polymer-on-metal interactions, a molecular beam deposition (MBD) technique is necessary. This technique was first demonstrated for polyimide by Salem and co ... 

Surface modification is a domain on its own. To suit certain purposes, dry surfaces can be changed by a number of techniques, such as ion bombardment, molecular beam deposition, sputtering (erosion as a result of bombardment with high-energy molecules), doping, coating or chemisorption. Let it be sufficient to note that, after modification, our techniques can be used to detect and analyse the incurred changes ). 

The realistic possibility considering such organic crystalline structures has only recently appeared due to progress in the development of organic molecular beam deposition and related techniques (13). Such progress has led to monolayer control over the growth of organic thin films and superlattices with extremely... 

The deposition and electrical characterization of R metal and R hydride films have been reported in the seventies (e.g., Curzon and Singh (1978, 1979)). Since the discovery of the switchable mirror effect, a variety of techniques have been utilized to deposit R metal polycrystalline and epitaxial films e.g., molecular beam deposition (e.g., Huiberts et al. (1996b)), sputter deposition (e.g., van der Sluis et al. (1997), van der Sluis and Mercier (2001), Mercier and van der Sluis (2001)), pulsed laser deposition (e.g.. Dam et al. (2003)) and thermal evaporation (e.g., Mor and Malhotra (2000)). Typically for pure R metals films, a base pressure of 10 Pa, is an essential requirement (Huiberts et al., 1996b Wildes et al., 1996). Where as room temperature deposition resulted in polycrystalline films, a higher substrate temperature was utilized for depositing epitaxial films. Due to the higher... 

Epitaxial crystal growth methods such as molecular beam epitaxy (MBE) and metalorganic chemical vapor deposition (MOCVD) have advanced to the point that active regions of essentially arbitrary thicknesses can be prepared (see Thin films, film deposition techniques). Most semiconductors used for lasers are cubic crystals where the lattice constant, the dimension of the cube, is equal to two atomic plane distances. When the thickness of this layer is reduced to dimensions on the order of 0.01 )J.m, between 20 and 30 atomic plane distances, quantum mechanics is needed for an accurate description of the confined carrier energies (11). Such layers are called quantum wells and the lasers containing such layers in their active regions are known as quantum well lasers (12). 

Another evaporation technique is molecular beam epitaxy (MBE). MBE produces extremely pure and very thin films with abrupt composition changes and is being considered for extremely exacting electronic and optoelectronic applications. PI However, the deposition rate is very slow and the process is still considered experimental. 

The deposition of a wide range of materials using beams of elemental sources in high-vacuum apparatus (10-4—10-8 torr), essentially by physical methods, is known as molecular beam epitaxy (MBE)8 12 and atomic layer epitaxy (ALE). These methods will be mentioned where there is an overlap with CVD techniques, but will not be fully reviewed. (They are mentioned also in Chapter 9.15). 

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