Electrons secondary

Figure Al.7.12. Secondary electron kinetic energy distribution, obtained by measuring the scadered electrons produced by bombardment of Al(lOO) with a 170 eV electron beam. The spectrum shows the elastic peak, loss features due to the excitation of plasmons, a signal due to the emission of Al LMM Auger electrons and the inelastic tail. The exact position of the cutoff at 0 eV depends on die surface work fimction.

Application High-resolution signal (TEM, STEM) Back-scattering of electrons (BSE signal in SEM) Analytical signal (TEM, STEM, SEM) Emission of secondary electrons (SE signal in SEM)... 

In SEM and STEM, all detectors record the electron current signal of tire selected interacting electrons (elastic scattering, secondary electrons) in real time. Such detectors can be designed as simple metal-plate detectors, such as the elastic dark-field detector in STEM, or as electron-sensitive PMT. For a rigorous discussion of SEM detectors see [3],... 

Figure Bl.25.6. Energy spectrum of electrons coming off a surface irradiated with a primary electron beam. Electrons have lost energy to vibrations and electronic transitions (loss electrons), to collective excitations of the electron sea (plasmons) and to all kinds of inelastic process (secondary electrons). The element-specific Auger electrons appear as small peaks on an intense background and are more visible in a derivative spectrum.

Figure Bl.26.22. The energy width W of an ultraviolet photoelectron spectrum from a solid may be used to detemiine the work fimction. Changes in work fimction may be obtained from changes in the cut-off of the secondary electron peak (inset) (Attard G and Bames C 1988 Surfaces (Oxford Oxford University Press)).

Ions impacting onto the cathode during a discharge cause secondary electrons and other charged and neutral species from the electrode material to be ejected. Some of these other particles derived... 

As mentioned previously, a particle such as an ion traveling at high speed causes a number of secondary electrons to be ejected when it strikes a metal surface. This principle is utilized in the electron multiplier (Figure 28.3). 

Ions traveling at high speed strike the inside of the metal (Faraday) cup and cause secondary electrons to be ejected. This production of electrons constitutes a temporary flow of electric current as the electrons are recaptured. 

An incident ion beam causes secondary electrons to be emitted which are accelerated onto a scintillator (compare this with the operation of a TV screen). The photons that are emitted (like the light from a TV screen) are detected not by eye but with a highly sensitive photon detector (photon multiplier), which converts the photon energy into an electric current. 

An ion beam causes secondary electrons to be ejected from a metal surface. These secondaries can be measured as an electric current directly through a Faraday cup or indirectly after amplification, as with an electron multiplier or a scintillation device. These ion collectors are located at a fixed point in a mass spectrometer, and all ions are focused on that point — hence the name, point ion collector. In all cases, the resultant flow of an electric current is used to drive some form of recorder or is passed to an information storage device (data system). 

A typical single microchannel electron multiplier. Note how the primary ion beam causes a shower of electrons to form, The shower is accelerated toward the other end of the microchannel, causing the formation of more and more secondary electrons. 

Electron multiplier. A device to multiply current in an electron beam (or in a photon or particle beam after conversion to electrons) by incidence of accelerated electrons upon the surface of an electrode. This collision yields a number of secondary electrons greater than the number of incident electrons. These electrons are then accelerated to another electrode (or another part of the same electrode), which in turn emits secondary electrons, continuing the process. 

Edx is based on the emission of x-rays with energies characteristic of the atom from which they originate in Heu of secondary electron emission. Thus, this technique can be used to provide elemental information about the sample. In the sem, this process is stimulated by the incident primary beam of electrons. As will be discussed below, this process is also the basis of essentially the same technique but performed in an electron spectrometer. When carried out this way, the technique is known as electron microprobe analysis (ema). 

Electrica.1 Properties. The electrical properties of SF stem primarily from its effectiveness as an electron scavenger. To accomplish electrical breakdown in a dielectric gas, primary electrons must gain sufficient energy to generate appreciable numbers of secondary electrons on molecular impact. Sulfur hexafluoride interferes with this process by capturing the primary electrons, resulting in the formation of SF or SF ions and F atoms (29) ... 

Electron Beam Techniques. One of the most powerful tools in VLSI technology is the scanning electron microscope (sem) (see Microscopy). A sem is typically used in three modes secondary electron detection, back-scattered electron detection, and x-ray fluorescence (xrf). AH three techniques can be used for nondestmctive analysis of a VLSI wafer, where the sample does not have to be destroyed for sample preparation or by analysis, if the sem is equipped to accept large wafer-sized samples and the electron beam is used at low (ca 1 keV) energy to preserve the functional integrity of the circuitry. Samples that do not diffuse the charge produced by the electron beam, such as insulators, require special sample preparation. 

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