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Thermal energy distribution

The second step is the molecular dynamics (MD) calculation that is based on the solution of the Newtonian equations of motion. An arbitrary starting conformation is chosen and the atoms in the molecule can move under the restriction of a certain force field using the thermal energy, distributed via Boltzmann functions to the atoms in the molecule in a stochastic manner. The aim is to find the conformation with minimal energy when the experimental distances and sometimes simultaneously the bond angles as derived from vicinal or direct coupling constants are used as constraints. [Pg.236]

Example The thermal energy distribution curves for 1,2-diphenylethane, C14H14, 5 = 3 X 28 - 6 = 78, have been calculated at 75 and 200 °C. [34] Their maxima were obtained at about 0.3 and 0.6 eV, respectively, with almost no molecules reaching beyond twice that energy of maximum probability. At 200 °C, the most probable energy roughly corresponds to 0.008 eV per vibrational degree of freedom. [Pg.22]

That is, the high-pressure limit dissociation rate coefficient of A, k, is independent of the density ([M]) of the system. Under these conditions, [A ] is related to the thermal energy distribution function by... [Pg.163]

Troe s analysis summarized above requires the knowledge of both low- and high-pressure rate constants, in addition to an empirically determined to describe the actual fall-off behavior. We already discussed methods for the estimation of high-pressure rate parameters. The low-pressure rate parameters can be estimated by recognizing the fact that ko represents pure energy transfer limitations, and thus can be determined from rate of collisional energization of A and from the thermal energy distribution function K E, T) ... [Pg.166]

Thermally Activated Systems. The equilibrium (high pressure) kinetic isotope effect in thermal activation systems is the one conventionally measured and the theoretical basis for this limiting case has been well formulated.3 In the low-pressure non-equilibrium regime, very large inverse statistical-weight secondary isotope effects can occur. 20 b These effects are dependent on the ambient temperature and the thermal energy distribution function the latter is considered in Sec. III-E, and discussion of these effects is postponed until Sec. III-E,4. [Pg.35]

The expressions for the components of the total faradaic current at the semiconductor surface as given in eqns. (173) (176) show that this current is given as the product of factors intrinsic to the electron transfer process taking place, to the concentration and thermal energy distribution of the redox couple, and to the concentration of carriers or the density of states. If we restrict attention to an n-type semiconductor and assume that only electron transfer to and from the conduction band is significant, then the nett current can be written... [Pg.128]

EFFECT OF INCREASED TEMPERATURE ON THERMAL ENERGY DISTRIBUTION... [Pg.59]

The major application of this technique, principally by Lindholm and co-workers (see Chapter 10), has capitalized on the above limitation in a study of charge-transfer processes, where the products may exhibit a thermal energy distribution. Even in this application, cross sections are difficult to obtain because the sampling volume is not well defined. Lindholm has been careful to quote only Q values which are estimates of the relative reaction efficiencies. There is another reason why any such cross section so measured may be unreliable. It is plausible, and indeed it has recently been demonstrated, that charge-transfer reactions may yield some products which are forward-scattered in the laboratory framework these would result from collisions with small impact parameters. To the extent that these products will not be detected in a transverse tandem machine, the measured cross section will be underestimated. [Pg.125]

Fig. 2. The use of a de ejection field within the collision chamber to extract product ions formed with a thermal energy distribution. Here, the product ions are argon ions formed by symmetric charge transfer from a 60-eV argon primary ion beam (laboratory energy). The argon product ion intensity (in arbitrary units) is plotted as a function of the potential (in volts) applied to the exit slit with respect to the entrance slit. The collision chamber is 0.5 cm long. A constant, residual argon ion intensity is to be noticed at negative potentials these are product ions formed from reaction outside the collision chamber. Fig. 2. The use of a de ejection field within the collision chamber to extract product ions formed with a thermal energy distribution. Here, the product ions are argon ions formed by symmetric charge transfer from a 60-eV argon primary ion beam (laboratory energy). The argon product ion intensity (in arbitrary units) is plotted as a function of the potential (in volts) applied to the exit slit with respect to the entrance slit. The collision chamber is 0.5 cm long. A constant, residual argon ion intensity is to be noticed at negative potentials these are product ions formed from reaction outside the collision chamber.
Relaxations tend to divide into two types those that obey a simple Arrhenius temperature dependence and those that do not. For simple thermally activated processes Arrhenius behaviour is observed. The probability of the dipole reorientating depends directly on the thermal energy distribution. The relaxation time is related to the frequency of maximum dielectric loss ... [Pg.187]

Over the years, the FA technique has undergone continuous refinement and development and fotmd a wide variety of applications, e.g., in fundamentals of ion-molecttle reactiorts and in atmospheric and interstellar chemistry [104]. The FA technique enables the generation of high-density, steady state populations of ions and reactive neutral species with well-defined thermal energy distributions. The reaction conditiotts can be carefully controlled among others due to the temporal... [Pg.101]

Fig. 4.71. Effect of a traveling wave DC pulse along a stacked ring ion guide. Ions in front of the DC pulse are moving along from stack to stack and are thus propulsed through the device (T-wave ion guide). A buffer gas is required to narrow down the thermal energy distribution. Reproduced from Ref. [242] with permission. Elsevier Science Publishers, 2007. Fig. 4.71. Effect of a traveling wave DC pulse along a stacked ring ion guide. Ions in front of the DC pulse are moving along from stack to stack and are thus propulsed through the device (T-wave ion guide). A buffer gas is required to narrow down the thermal energy distribution. Reproduced from Ref. [242] with permission. Elsevier Science Publishers, 2007.
EC. GIS—specialized GIS system for enterprises of thermal energy distribution of Globema company, based on Smallworld, composed of a number of functional modules. [Pg.517]


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See also in sourсe #XX -- [ Pg.617 ]




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