Electron beam evaporation techniques

In our study, a three-layered Al/Cu/Ti film was employed as the seeding layer for electroless Cu deposition process. These metal films were deposited using the electron-beam evaporation technique and the substrates employed were thermally oxidized <100> silicon wafers. Ti is employed as the first layer, to serve as a barrier/adhesion promotion layer since Ti adheres well to most dielectric substrates and can prevent Cu diffusion into Si02. The second layer, Cu is the best homogenous catalyst for electroless Cu deposition. The last layer, A1 is a sacrificial layer to prevent Cu oxidation before immersing into the electroless deposition solution. 

Ta films, Al/Ta and AFTa/Al thin film stractures were deposited onto dielectric substrates using electron beam evaporation technique. The bottom A1 layer was deposited to provide an electric contact to the intermediate Ta layer during its anodic oxidation and to form more uniform structure. Upper and bottom A1 layers was then also used for electrical characterization of the structures formed by the... 

In view of the complexity of real supported catalysts, consisting of randomly oriented and irregularly shaped metal particles on high surface area porous supports, well oriented and regularly shaped metal particles grown on planar thin supports are frequently used as model catalysts [19]. This facilitates the study by surface science and TEM techniques [11, 74, 75]. In the present work, Pt particles were grown at 623 K by electron beam evaporation of Pt at a pressure of 10 mbar on vacuum-cleaved (001) NaCl... 

Vacuum deposition techniques, such as sputtering, electron beam evaporation, and plasma deposition are common. Photopolymerization and laser-assisted depositions are used for preparation of specialized layers, particularly in the fabrication of sensing arrays. Most commercial instruments have thickness monitors (Chapter 4) that allow precise control of the deposition process. 

In [55] a large-area fabrication of hexagonally ordered metal dot arrays with an area density of 10u/cm2 was demonstrated. The metal dots were produced by an electron beam evaporation followed by a lift-off process. The dots size was 20 nm dots with a 40 nm period by combining block copolymer nanolithography and a trilayer resist technique. A self-assembled spherical-phase block copolymer top layer spontaneously generated the pattern, acting as a template. The pattern was first transferred to a silicon nitride middle layer by reactive ion etch, producing holes. The nitride layer was then used as a mask to further etch into a polyamide bottom layer. 

Porous structure of the outer support surface has been modified by deposition of the additional layer of metal Ni. Two vacuum condensation techniques have been used for nickel deposition dc ion magnetron sputtering and electron beam evaporation. To produce coatings on tubes additional installation for dc sputtering has been designed. 

For evaporative or sublimation process, correct selection of evaporation method, the evaporation source, and the evaporation temperatnre is required to surmount the attractive intermolecular forces existing within the starting material. The parameters depend primarily on the materials nsed and the film purity required. Indirect resistance heating, flash evaporation, and electron beam heating techniques are used for this purpose. 

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