Silicon secondary electron Images

Figure 4.14 Secondary electron image of a cracked silicon surface. Electron number effects make the edges of surface cracks brighter than the rest of the surface.

Due to the fact that silicon nitride is an electric isolator, the investigations were carried out in a low vacuum chamber keeping the vacuum pressure of 50 Pa. Both BSE (backscattered electrons) and ESED (secondary electrons) images were recorded. Wear products produced on the tool faces were analyzed using energy dispersive X-ray (EDX) technique. 

Figure 9 Secondary electron image (upper left) and Auger elemental maps of C, Al, Si, and F of silicon wafer contamination comprising an Al central particle with fluorocarbon petals. (Reproduced with permission of ULVAC-PHI.)...

Fig. 6.7 Secondary electron images of a raised bar on silicon, tilted 45°, with the beam voltage set to (A) 30 kV, (B) 15 kV, (C) 5 kV and (D) 1 kV. The excess emission due to the edges spreads right across the bar at 30 kV. At 5 and 1 kV there is only a narrow, and a very narrow, bright line near the edge of the bar. (From Reimer [30] reproduced with permission.)...

Figure 10 Estimation of the spot size of the 2-MeV helium ion microbeam from the image of a silicon relief pattern obtained by detecting secondary electrons.

Fig. 3. FE-SEM secondary electron (SE) images of representative microstiuctures in a silicone resin emulsion paint.

Figure 13.12 SEM image of a forest of vertically aligned SWNT obtained by decomposition of CO at 750°C over CoMo catalyst deposited on a silicon flat substrate. The image iiiustrates the relative rigidity of the crust on top of the forest, which remains connected whiie, in this case, a piece has become detached from the rest of the forest. The higher brightness of the crust is due to a higher intensity of secondary electrons emitted by the dense crust. (Reproduced with permission from L. Zhang et al, Chem. Mater. 2006,18, 235624.)...

Fig. 4. PS-b-PEO thin films on silicon substrates. (A) PS-b-PEO of molecular weight 42,000-11,500 g moH and (B) PS-b-PEO of molecular weight 32,000-11,000 g moH. Images were taken by secondary electron microscopy after selective removal of the PEO block. It is relatively easy (in the left hand image) to see grain boundary type structures as the areas where one alignment of the structure exist are quite large.

Figure 3.7 Secondary electron (SE) imaging and X-ray mapping of the elements silicon (Si), calcium (Ca), and oxygen (O) of polymeric concrete sample consisting of epoxy, quartz (SiOj), calcite (CaCOj).

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