Surface analysis secondary electron microscopy-energy

The most frequently applied analytical methods used for characterizing bulk and layered systems (wafers and layers for microelectronics see the example in the schematic on the right-hand side) are summarized in Figure 9.4. Besides mass spectrometric techniques there are a multitude of alternative powerful analytical techniques for characterizing such multi-layered systems. The analytical methods used for determining trace and ultratrace elements in, for example, high purity materials for microelectronic applications include AAS (atomic absorption spectrometry), XRF (X-ray fluorescence analysis), ICP-OES (optical emission spectroscopy with inductively coupled plasma), NAA (neutron activation analysis) and others. For the characterization of layered systems or for the determination of surface contamination, XPS (X-ray photon electron spectroscopy), SEM-EDX (secondary electron microscopy combined with energy disperse X-ray analysis) and... 

Finally, the surfaces of the cores are examined both optically and by secondary electron microscopy to determine the extent of microstructural changes that are occuring due to atmospheric exposure. Energy dispersive analysis of x-rays (EDAX) also serves to detect atmospheric particles which have deposited onto the core surface. All this information can then be used to at least qualitatively identify deterioration processes that may be occuring. 

With the exception of the scanning probe microscopies, most surface analysis teclmiques involve scattering of one type or another, as illustrated in figure A1.7.11. A particle is incident onto a surface, and its interaction with the surface either causes a change to the particles energy and/or trajectory, or the interaction induces the emission of a secondary particle(s). The particles that interact with the surface can be electrons, ions, photons or even heat. An analysis of the mass, energy and/or trajectory of the emitted particles, or the dependence of the emitted particle yield on a property of the incident particles, is used to infer infomiation about the surface. Although these probes are indirect, they do provide reliable infomiation about the surface composition and structure. 

Surface analytical methods — Important ex situ methods for surface analysis are X-Ray Photoelectron Spectroscopy (XPS) UV-Photoelectron Spectroscopy (UPS), Auger Electron Spectroscopy (AES), Ion Scattering Spectroscopy (ISS), Rutherford Backscattering (RBS), Secondary Ion Mass Spectroscopy (SIMS), Scanning Electron Microscopy (SEM), Electron Microprobe Analysis (EMA), Low Energy Electron Diffraction (LEED), and High Energy Electron Diffraction (RHEED). 

The transmission electron microscopy was done with a 100-kV accelerating potential (Hitachi 600). Powder samples were dispersed onto a carbon film on a Cu grid for TEM examination. The surface analysis techniques used, XPS and SIMS, were described earlier (7). X-ray photoelectron spectroscopy was done with a Du Pont 650 instrument and Mg K radiation (10 kV and 30 mA). The samples were held in a cup for XPS analysis. Secondary ion mass spectrometry and depth profiling was done with a modified 3M instrument that was equipped with an Extranuclear quadrupole mass spectrometer and used 2-kV Ne ions at a current density of 0.5 /zA/cm2. A low-energy electron flood gun was employed for charge compensation on these insulating samples. The secondary ions were detected at 90° from the primary ion direction. The powder was pressed into In foil for the SIMS work. 

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