Scanning electronic microscope

ESEM environmental scanning electron microscope ESI electron spectroscopic imaging... 

LVSEM low-voltage scanning electron microscope MTF modulation transfer function... 

Zach J 1989 Design of a high-resolution low-voltage scanning electron microscope Opf/k 83 30-40... 

Light microscope Scanning electron microscope Transmission electron microscope Scanning probe microscope... 

A scanning electron microscope can also be equipped with additional instmmentation for electron-excited x-ray analysis (9). In many systems, this is performed in the mode known as energy dispersive x-ray analysis (edx). Other common acronyms for this method are eds for energy dispersive spectroscopy or edax for energy dispersive analysis of x-rays. 

Fig. 13. Scanning electron microscope (sem) photographs of Parylene C-coated printed circuit conductor peeled to demonstrate the adhesion of the...

Electron Beam Techniques. One of the most powerful tools in VLSI technology is the scanning electron microscope (sem) (see Microscopy). A sem is typically used in three modes secondary electron detection, back-scattered electron detection, and x-ray fluorescence (xrf). AH three techniques can be used for nondestmctive analysis of a VLSI wafer, where the sample does not have to be destroyed for sample preparation or by analysis, if the sem is equipped to accept large wafer-sized samples and the electron beam is used at low (ca 1 keV) energy to preserve the functional integrity of the circuitry. Samples that do not diffuse the charge produced by the electron beam, such as insulators, require special sample preparation. 

Fig. 1. Scanning electron microscope photograph of DSA mthenium oxide coating, showing typical cracked surface.

Microscopy is an unusual scientific discipline, involving as it does a wide variety of microscopes and techniques. All have in common the abiUty to image and enlarge tiny objects to macroscopic size for study, comparison, evaluation, and identification. Few industries or research laboratories can afford to ignore microscopy, although each may use only a small fraction of the various types. Microscopy review articles appear every two years m. Jinalytical Chemistty (1,2). Whereas the style of the Enclyclopedia employs lower case abbreviations for analytical techniques and instmments, eg, sem for scanning electron microscope, in this article capital letters will be used, eg, SEM. 

Penetration—Indentation. Penetration and indentation tests have long been used to characterize viscoelastic materials such as asphalt, mbber, plastics, and coatings. The basic test consists of pressing an indentor of prescribed geometry against the test surface. Most instmments have an indenting tip, eg, cone, needle, or hemisphere, attached to a short rod that is held vertically. The load is controlled at some constant value, and the time of indentation is specified the size or depth of the indentation is measured. Instmments have been built which allow loads as low as 10 N with penetration depths less than mm. The entire experiment is carried out in the vacuum chamber of a scanning electron microscope with which the penetration is monitored (248). 

Hardness. The Knoop indentation hardness of vitreous sihca is in the range of 473—593 kg/mm and the diamond pyramidal (Vickers) hardness is in the range of 600—750 kg/mm (1 4). The Vickers hardness for fused quartz decreases with increasing temperature but suddenly decreases at approximately 70°C. In addition, a small positive discontinuity occurs at 570°C, which may result from a memory of quartz stmcture (165). A maximum at 570°C is attributed to the presence of small amounts of quartz microcrystals (166). Scanning electron microscopic (sem) examination of the indentation area indicates that deformation is mainly from material compaction. There is htfle evidence of shear flow (167). 

Fig. 2. A series of progressively closer (scanning electron microscope) SEM photographs of the same membrane cross section, clearly showing skin and...

Measurement of Cross Section with a Scanning Electron Microscope... 

Figure 4.19 Scanning electron microscope picture of cuprous oxide crystals as shown in Fig. 4.18. Note the partial octahedral symmetry.

Figure 15.2 Skeletal remnants of noble phase. (Magnification 200x, scanning electron microscope.)...

Close examination of the weld under a low-power stereoscopic microscope revealed small openings (Fig. 15.6). Probing these sites with a pin revealed a large pit that had been covered by a thin skin of weld metal. These sites contained fibrous, metallic remnants (Fig. 15.7). Examination under a scanning electron microscope further revealed the fibrous character of the material (Fig. 15.2) and also the convoluted shapes of the individual fibers (Fig. 15.21). Energy-dispersive spectrographic analysis of this material revealed the compositions in Table 15.1. 

The Ni3S2 constituent formed on the surface and scale formation was observed in all areas of the blade roots. The mechanism seemed to be more prevalent above the root pressure boundary than other areas of the blade root. Characterization of the scale was performed using a Scanning Electron Microscope equipped with an Energy Dispersion X-ray analyzer (EDX). 

For the purpose of a detailed materials characterization, the optical microscope has been supplanted by two more potent instruments the Transmission Electron Microscope (TEM) and the Scanning Electron Microscope (SEM). Because of its reasonable cost and the wide range of information that it provides in a timely manner, the SEM often replaces the optical microscope as the preferred starting tool for materials studies. 

A CL system attached to a scanning electron microscope (SEM) provides a powerful means for the uniformity studies of luminescent materials with the spatial resolution of less than 1 pm. 

The electron-optical performance of the EPMA system is indistinguishable from that of a conventional scanning electron microscope (SEM) thus, EPMA combines all of the imaging capabilities of a SEM with quantitative elemental analysis using both energy- and wavelength-dispersive X-ray spectrometry. ... 

If an incident electron beam of sufficient energy for AES is rastered over a surface in a manner similar to that in a scanning electron microscope (SEM), and if the analyzer is set to accept electrons of Auger energies characteristic of a particular element, then an elemental map or image is again obtained, similar to XPS for the Quantum 2000 (Sect. 2.1.2.5). 

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