Czochralski

Lithium Niobate. Lithium niobate [12031 -64-9], LiNbO, is normally formed by reaction of lithium hydroxide and niobium oxide. The salt has important uses in switches for optical fiber communication systems and is the material of choice in many electrooptic appHcations including waveguide modulators and sound acoustic wave devices. Crystals of lithium niobate ate usually grown by the Czochralski method foUowed by infiltration of wafers by metal vapor to adjust the index of refraction. 

TJItrahigh (99.999 + %) purity tellurium is prepared by zone refining in a hydrogen or inert-gas atmosphere. Single crystals of tellurium, tellurium alloys, and metal teUurides are grown by the Bridgman and Czochralski methods (see Semiconductors). 

An example of an analysis done on polysilicon and single-crystal Czochralski silicon (CZ) is shown in Table 1. As can be seen, polysilicon, which was used to grow the crystal, is dirtier than the CZ silicon. This is expected, since segregation coefficients limit the incorporation of each element into the crystal boule during the crystal growth process. All values shown in the table are from bulk analysis. Table 2 shows NAA data obtained in an experiment where surface analysis was accom-... 

In Bridgman growth [155], a boat or vessel filled with the melt is slowly cooled from one side, so that the crystal forms from that side. In Czochralski growth [156,157] a cylindrical crystal sits on the surface of the melt and is slowly pulled upward. In both cases the hydrodynamical flow of the melt is an important factor in the chemical composition and fine structure of the resulting crystal. 

H. Kopetsch. A numerical method for the time-dependent Stefan-problem in Czochralski crystal growth. J Crystal Growth SS 71, 1988 H. Kopetsch. Phy-sico-Chem Hydrodyn 77 357, 1989 H. Kopetsch. J Cryst Growth 102 500, 1990. 

M. Mihelcic, K. Wingerath. Threedimensional simulations of the Czochralski bulk flow in a stationary transverse magnetic field and in a vertical magnetic field Effects on the asymmetry of the flow and temperature distribution in the Si-melt. J Cryst Growth S2 318, 1987. 

N. Miyazaki, S. Okuyama. Development of finite element computer program for dislocation density analysis of bulk semiconductor single crystals during Czochralski growth. J Cryst Growth 183 S, 1998. 

S. lida, Y. Aoki, K. Okitsu, Y. Sugita, H. Kawata, T. Abe. Microdefects in an as-grown Czochralski silicon crystal studied by synchrotron radiation section topography with aid of computer simulation. Jpn J Appl Phys Ptl 57 241, 1998. 

T. Sinno, R. A. Brown, W. Van Ammon, E. Dornberger. Point defect dynamics and the oxidation-induced stacking-fault ring in Czochralski-grown silicon crystals. J Electrochem Soc 145 302, 1998. 

H. Takeno, T. Otogawa, Y. Kitagawara. Practical computer simulation technique to predict oxygen precipitation behavior in Czochralski silicon wafers for various thermal processes. J Electrochem Soc 144 4340, 1997. 

Y.-S. Lee, C.-H. Chun. Experiments on the oscillatory convection of low Prandtl number hquid in Czochralski configuration for crystal growth with cusp magnetic field. J Cryst Growth 180 411, 1997. 

J. Jaervinen, R. Nieminen, T. Tiihonen. Time-dependent simulation of Czochralski silicon crystal growth. J Cryst Growth 750 468, 1997. 

D. Givoli, J. E. Flaherty, M. S. Shephard. Simulation of Czochralski melt flows using parallel adaptive finite element procedures. Model Simul Mater Sci Eng 4 623, 1996. 

Zhang Weihan, Yan Shuxia, Ji Zhijiang. Effective segregation coefficient and steady state segregation coefficient of germanium in Czochralski silicon. J Cryst Growth 169 598, 1996. 

The next step is the hydrogen reduction of the trichlorosilane (Reaction 2 above). The end product is a poly crystalline silicon rod up to 200 mm in diameter and several meters in length. The resulting EGS material is extremely pure with less than 2 ppm of carbon and only a few ppb of boron and residual donors. The Czochralski pulling technique is used to prepare large single crystals of silicon, which are subsequently sliced into wafers for use in electronic devices.1 1... 

Vessels for Czochralski crystal growth of III-V and II-VI compounds (i.e., gallium arsenide). 

The pcirameters for CZOCHRALSKI GROWTH are listed in the order of their importance ... 

It is this factor which mandates the very careful design of the Czochralski Apparatus. 

The next most importtmt parameters in Czochralski growth of crystals are the heat flow and heat losses in the system. Actually, aU of the parameters (with the possible exception of 2 and 9) are strongly ciffected by the heat flow within the crystal-pulling system. A tj pical heat-flow pattern in a Czochralski sjretem involves both the crucible and the melt. The pattern of heat-flow is important but we will not expemd upon this topic here. Let it suffice to point out that heat-flow is set up in the melt by the direction of rotation of the cr5rstal being pulled. It is also ctffected by the upper surface of the melt and how well it is thermally insulated from its surroundings. The circular heat flow pattern causes the surface to radiate heat. The crystal also absorbs heat and re-radiates it... 

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