Czochralski growth

Bulk Crystal Growth Czochralski Bridgman Float zone... 

An example of an analysis done on polysilicon and single-crystal Czochralski silicon (CZ) is shown in Table 1. As can be seen, polysilicon, which was used to grow the crystal, is dirtier than the CZ silicon. This is expected, since segregation coefficients limit the incorporation of each element into the crystal boule during the crystal growth process. All values shown in the table are from bulk analysis. Table 2 shows NAA data obtained in an experiment where surface analysis was accom-... 

In Bridgman growth [155], a boat or vessel filled with the melt is slowly cooled from one side, so that the crystal forms from that side. In Czochralski growth [156,157] a cylindrical crystal sits on the surface of the melt and is slowly pulled upward. In both cases the hydrodynamical flow of the melt is an important factor in the chemical composition and fine structure of the resulting crystal. 

H. Kopetsch. A numerical method for the time-dependent Stefan-problem in Czochralski crystal growth. J Crystal Growth SS 71, 1988 H. Kopetsch. Phy-sico-Chem Hydrodyn 77 357, 1989 H. Kopetsch. J Cryst Growth 102 500, 1990. 

M. Mihelcic, K. Wingerath. Threedimensional simulations of the Czochralski bulk flow in a stationary transverse magnetic field and in a vertical magnetic field Effects on the asymmetry of the flow and temperature distribution in the Si-melt. J Cryst Growth S2 318, 1987. 

N. Miyazaki, S. Okuyama. Development of finite element computer program for dislocation density analysis of bulk semiconductor single crystals during Czochralski growth. J Cryst Growth 183 S, 1998. 

Y.-S. Lee, C.-H. Chun. Experiments on the oscillatory convection of low Prandtl number hquid in Czochralski configuration for crystal growth with cusp magnetic field. J Cryst Growth 180 411, 1997. 

J. Jaervinen, R. Nieminen, T. Tiihonen. Time-dependent simulation of Czochralski silicon crystal growth. J Cryst Growth 750 468, 1997. 

Zhang Weihan, Yan Shuxia, Ji Zhijiang. Effective segregation coefficient and steady state segregation coefficient of germanium in Czochralski silicon. J Cryst Growth 169 598, 1996. 

Vessels for Czochralski crystal growth of III-V and II-VI compounds (i.e., gallium arsenide). 

The pcirameters for CZOCHRALSKI GROWTH are listed in the order of their importance ... 

The next most importtmt parameters in Czochralski growth of crystals are the heat flow and heat losses in the system. Actually, aU of the parameters (with the possible exception of 2 and 9) are strongly ciffected by the heat flow within the crystal-pulling system. A tj pical heat-flow pattern in a Czochralski sjretem involves both the crucible and the melt. The pattern of heat-flow is important but we will not expemd upon this topic here. Let it suffice to point out that heat-flow is set up in the melt by the direction of rotation of the cr5rstal being pulled. It is also ctffected by the upper surface of the melt and how well it is thermally insulated from its surroundings. The circular heat flow pattern causes the surface to radiate heat. The crystal also absorbs heat and re-radiates it... 

List the ways that one ean obtain a "seed" crystal. Is it possible to use one t37pe of crystal-growth method to obtain a seed crystal for Czochralski growth ... 

Czochralski seeded single-crystal growth from semiconductors stable as melts, which yields the meters-large single crystals of ultra-high purity silicon used in nearly all technological applications. 

T. Inada and T. Fukuda, Direct Synthesis and Growth of Indium Phosphide by the Liquid Phosphorous Encapsulated Czochralski Method O. Oda, K. Katagiri, K. Shinohara, S. Katsura, Y. Takahashi, K. Kainosho, K. Kohiro, and R. Hirano, InP Crystal Growth, Substrate Preparation and Evaluation K. Tada, M. Tatsumi, M. Morioka, T. Araki, and T. Kawase, InP Substrates Production and Quality Control... 

The liquid-encapsulated Czochralski process and the growth of III-V crystals... 

The figure on the inner front cover of this book can be used to convert between doping density, carrier mobility and resistivity p for p- or n-type doped silicon substrates. One of the major contaminants in silicon is oxygen. Its concentration depends on the crystal growth method. It is low in FZ material and high (about 1018 cm-3) in Czochralski (CZ) material. 

R. Mazelsky, R.H. Hopkins, W.E. Kramer, Czochralski growth of calcium fluoropho-sphate, J. Cryst. Growth 3,4 (1968) 260-264. 

The substrate for this CVD process is a thin silicon rod, called a slim rod, which serves as a nucleation site for the depositing silicon. After deposition, the EGS, or polysilicon, is processed in the Czochralski (CZ) growth process. 

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