Czochralski process

The liquid-encapsulated Czochralski process and the growth of III-V crystals... 

The so-called liquid-encapsulated Czochralski process, a modified version of the Czochralski method, is extensively used for preparing and growing III-V crystals. 

FIGURE 3.14 (a) The Czochralski process for producing a very pure single crystal of silicon (b) silicon boule. (Photo courtesy of Tonie van Ringelestijn.)... 

Shimada H, Hiroshima Y, Shimoda T. Low temperature single grain thin film transistor (LTSG-TFT) with SOI performance using CMP-flattened /r-Czochralski process. lEDM tech digest 2005. p 923-926. 

The silicon single cry.stals required for the manufacture of semiconductor components can be obtained in two ways either by pulling single crystals from the melt using the Czochralski process (CZ-pulling) or by crucible-free zone... 

Wafers grown by the Czochralski process " " dominate the monocrystalline fraction of the photovoltaic market. The process has a purifying effect with respect to several important metallic impurities, to the extent that even poor quality starting material can produce good solar cells. The polysilicon source material is melted in a crucible under vacuum or inert... 

The principle of the Czochralski process is to draw single crystals of Si from the molten element. The thermal... 

Czochralski Process - A method of growing large size, high quality semiconductor crystal by slowly lifting a seed crystal from a molten bath of the material under careful cooling conditions. 

In some practical situations we require ceramics to support a tensile load. Consider the growth of silicon single crystals by the Czochralski process, which involves pulling the crystal from the melt. The crystal is supported entirely by a narrow region called the neck, about 3 mm in diameter. It is possible to support a total crystal weight of about 200 kg. This requirement determines the maximum overall volume of a silicon boule. The diameter is controlled by... 

The single crystals required for solid-state lasers are often made by the Czochralski process. Describe the advantages and disadvantages of using this process for producing single crystals of ruby and YAG. 

Figure 40.13 The Czochralski process for producing silicon single crystals.

Thin silicon wafers are cut from the single silicon ingots and then etched to produce integrated circuits. The typical electrical resistivity of a wafer produced by the Czochralski process is 150 Qcm, whereas the resistivity of a wafer manufactured by zone melting may be as high as 20 000 Cl cm. 

In contrast to crystals grown by the zone melting method, those produced by the Czochralski process contain close to 10 atoms of O per cm of Si. The impurity originates from the reaction of Si with the hot Si02 cmcihle ... 

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