Czochralski crystal rotation

Silicon is produced by a well-controlled Czochralski crystal growth process in a very clean environment, that is, class of 1 or 10. In this process, a small seed crystal is dipped into a highly purified silicon melt. This seed is slowly pulled while the crucible containing the melt is rotated. The silicon crystal grows along the selected orientation of the seed to the rod. A cylindrical crystal is obtained from which slices are cut. This is followed by the atomic polishing phase. The side of one cubic face is 5.43A. The mechanical, electrical, and thermal properties of silicon have been presented in Table 10.1. 

The next most importtmt parameters in Czochralski growth of crystals are the heat flow and heat losses in the system. Actually, aU of the parameters (with the possible exception of 2 and 9) are strongly ciffected by the heat flow within the crystal-pulling system. A tj pical heat-flow pattern in a Czochralski sjretem involves both the crucible and the melt. The pattern of heat-flow is important but we will not expemd upon this topic here. Let it suffice to point out that heat-flow is set up in the melt by the direction of rotation of the cr5rstal being pulled. It is also ctffected by the upper surface of the melt and how well it is thermally insulated from its surroundings. The circular heat flow pattern causes the surface to radiate heat. The crystal also absorbs heat and re-radiates it... 

The Czochralski Technique. Pulling from the melt is known as the Czochralski technique. Purified material is held just above the melting point in a cmcible, usually of Pt or Ir, most often powered by radio-frequency induction heating coupled into the wall of the crucible. The temperature is controlled by a thermocouple or a radiation pyrometer. A rotating seed crystal is touched to the melt surface and is slowly withdrawn as the molten material solidifies onto the seed. Temperature control is used to widen the crystal to the desired diameter. A typical rotation rate is 30 rpm and a typical withdrawal rate, 1—3 cm/h. Very large, eg, kilogram-sized crystals can be grown. 

The single crystal grown onto a rotating seed is pulled from the melt in the Czochralski-Kryopoulos method, Fig. 3.30. The flux is formed by the... 

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