Big Chemical Encyclopedia

Chemical substances, components, reactions, process design ...

Articles Figures Tables About

Czochralski crystals, oxygen

The figure on the inner front cover of this book can be used to convert between doping density, carrier mobility and resistivity p for p- or n-type doped silicon substrates. One of the major contaminants in silicon is oxygen. Its concentration depends on the crystal growth method. It is low in FZ material and high (about 1018 cm-3) in Czochralski (CZ) material. [Pg.5]

Kulkami, M.S. (2007). Defect dynamics in the presence of oxygen in growing Czochralski silicon crystals. Journal Crystal Growtit, Vol. 303, No. 2, pp. 438-448, ISSN 0022-0248. [Pg.631]

H. W. Lee, 2005, Oxygen concentration in the Czochralski-grown crystals with cusp-magnetic field ,... [Pg.203]

See other pages where Czochralski crystals, oxygen is mentioned: [Pg.417]    [Pg.417]    [Pg.209]    [Pg.209]    [Pg.472]    [Pg.234]    [Pg.29]    [Pg.1474]    [Pg.52]    [Pg.381]    [Pg.1805]    [Pg.4405]    [Pg.434]    [Pg.435]    [Pg.61]    [Pg.23]    [Pg.1804]    [Pg.4404]    [Pg.683]    [Pg.675]    [Pg.18]    [Pg.724]    [Pg.650]    [Pg.651]    [Pg.112]    [Pg.19]    [Pg.266]    [Pg.662]    [Pg.757]    [Pg.730]    [Pg.721]    [Pg.755]    [Pg.167]    [Pg.403]    [Pg.888]    [Pg.675]    [Pg.180]    [Pg.192]   


SEARCH



Czochralski

Czochralski crystallizers

© 2024 chempedia.info