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Czochralski method liquid encapsulated

T. Inada and T. Fukuda, Direct Synthesis and Growth of Indium Phosphide by the Liquid Phosphorous Encapsulated Czochralski Method O. Oda, K. Katagiri, K. Shinohara, S. Katsura, Y. Takahashi, K. Kainosho, K. Kohiro, and R. Hirano, InP Crystal Growth, Substrate Preparation and Evaluation K. Tada, M. Tatsumi, M. Morioka, T. Araki, and T. Kawase, InP Substrates Production and Quality Control... [Pg.655]

The so-called liquid-encapsulated Czochralski process, a modified version of the Czochralski method, is extensively used for preparing and growing III-V crystals. [Pg.609]

Fig. 4. Energy below the conduction band of levels reported in the literature for GaP. States are arranged from top to bottom chronologically, then by author. At the left is an indication of the method of sample growth or preparation liquid phase epitaxy (LPE), liquid encapsulated Czochralski (LEC), irradiated with 1-MeV electrons (1-MeV e), and vapor phase epitaxy (VPE). Next to this the experimental method is listed photoluminescence (PL), photoluminescence decay time (PLD), junction photocurrent (PCUR), photocapacitance (PCAP), transient capacitance (TCAP), thermally stimulated current (TSC), transient junction dark current (TC), deep level transient spectroscopy (DLTS), photoconductivity (PC), and optical absorption (OA). Fig. 4. Energy below the conduction band of levels reported in the literature for GaP. States are arranged from top to bottom chronologically, then by author. At the left is an indication of the method of sample growth or preparation liquid phase epitaxy (LPE), liquid encapsulated Czochralski (LEC), irradiated with 1-MeV electrons (1-MeV e), and vapor phase epitaxy (VPE). Next to this the experimental method is listed photoluminescence (PL), photoluminescence decay time (PLD), junction photocurrent (PCUR), photocapacitance (PCAP), transient capacitance (TCAP), thermally stimulated current (TSC), transient junction dark current (TC), deep level transient spectroscopy (DLTS), photoconductivity (PC), and optical absorption (OA).
Meniscus-Defined Crystal Growth Systems. In most conventional meniscus-defined growth systems, a seed crystal is dipped into a pool of melt, and the thermal environment is varied so that a crystal grows from the seed as it is pulled slowly out of the pool. Two examples of meniscus-defined growth are shown in Figure 1. The Czochralski (CZ) method (Figure lb) and the closely related liquid-encapsulated Czochralski (LEC) method are batchwise processes in which the crystal is pulled from a crucible with... [Pg.50]

M. J. McCollum and G. E. Stillman, High Purity InP Grown by Hydride Vapor Phase Epitaxy I. Inada and T. Fukuda, Direct Synthesis and Growth of Indium Phosphide by the Liquid Phosphorous Encapsulated Czochralski Method... [Pg.186]

T. H. Johansen, 1987, Analysis of the crystal weighing method applied to liquid encapsulated Czochralski growth , /. Cryst. Growth 84, 609-620. [Pg.264]

N. Sato, M. Kakimoto, and Y. Kadota, 1990, The carbon and boron concentration control in GaAs crystals grown by liquid encapsulated Czochralski method in Semi-insulating III-V Materials, Toronto, (eds.) A. Milnes and... [Pg.266]

See other pages where Czochralski method liquid encapsulated is mentioned: [Pg.463]    [Pg.610]    [Pg.246]    [Pg.448]    [Pg.23]    [Pg.225]    [Pg.231]    [Pg.265]    [Pg.187]    [Pg.235]   
See also in sourсe #XX -- [ Pg.23 ]



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