Czochralski crystal defects

Single crystal silicon is one of the important fundamental materials for the modern photovoltaic industry. The Czochralski method of growing single crystal silicon is affected by the thermocapillary convection. Temperature and concentration gradients at the free surface of the melt give rise to surface tension-driven Marangoni flow, which can lead to crystal defects, if it is sufficiently large. 

T. Sinno, R. A. Brown, W. Van Ammon, E. Dornberger. Point defect dynamics and the oxidation-induced stacking-fault ring in Czochralski-grown silicon crystals. J Electrochem Soc 145 302, 1998. 

W. Wijaranakula, Characterization of crystal originated defects in czochralski silicon using nonagi-tated Secco etching, J. Electrochem. Soc. 141, 3273, 1994. 

The calculations were carried out in the framework of the model of point defect dynamics, i.e., for the same crystals with the same parameters as in already the classical work on the simulation of microvoids and interstitial dislocation loops (A-microdefects) (Kulkarni et al., 2004). According to the analysis of the modern temperature fields used when growing crystals by the Czochralski method, the temperature gradient was taken to be G = 2.5 K/ mm (Kulkarni et al., 2004). The simulation was performed for crystals 150 mm in diameter, which were grown at the rates Vg = 0.6 and 0.7 mm/ min. These growth conditions correspond to the growth parameter Vg/ G >... 

At the stage of determining the type of the structure defect of software system works as follows. Initially is the choice of method of growing dislocation-free silicon single crystals (Czochralski method or the floating-zone method) and then is the choice of certain diameter of the crystal. The ratio of / G = theoretically and experimentally determined in a... 

Dornberger, E. Ammon, von W. Virbulis, J. Hanna, B. Sinno T. (2001). Modeling of transient point defect dynamics in Czochralski silicon crystal. Journal Crystal Growth, Vol. 230, No. 1-2, pp. 291-299, ISSN 0022-0248. 

Itsumi, M. (2002). Octahedral void defects in Czochralski silicon. Journal Crystal Growth, Vol. 

Kato, M. Yoshida, T. Ikeda, Y. Kitagawara, Y. (1996). Transmission electron microscope observation of "IR scattering defects" in as-grown Czochralski Si crystals. Japanese Journal Applied Physics, Vol. 35, No. 11, pp. 5597-5601, ISSN 0021-4922. 

Kulkami, M.S. (2007). Defect dynamics in the presence of oxygen in growing Czochralski silicon crystals. Journal Crystal Growtit, Vol. 303, No. 2, pp. 438-448, ISSN 0022-0248. 

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