Modified Czochralski

A continuous monocrystalline sapphire (A1203) fibre has been prepared as single-crystal fibres by LaBelle and Mlavsky using a modified czochralski puller and radio frequency heating. The technique adopted in this method is called edge-defined film-fed growth (EFG) [18-22], Figure 3.4 shows a schematic of the EFG method. 

The y-LiA.102 substrates used in this study were grown by a modified Czochralski method at the Institute for Crystal Growth in Berlin, Germany, and were chemo-mechanically polished. The peak-to-valley (P/V) roughness and root-mean-square (RMS) roughness of the polished substrates have values of 1.0 nm and 0.08 nm, respectively, across a 3 x 3 area. These values compare favorably with those obtained for state-of-the-art polished SiC or AI2O3 substrates. 

Trace element glasses (a) 500 ppm (b) 50 ppm (c) Ippm (d) 0.02 ppm Homogeneous batches of doped glass drawn into canes by modified Czochralski technique (a) See Table 3 (b) See Table 4 (c) See Table 5 (d) See Table 6 Isotope dilution mass spectrometry, activation analysis, polarography, spectrophotometry, spark source mass spectrometry, flame emission, atomic absorption... 

The so-called liquid-encapsulated Czochralski process, a modified version of the Czochralski method, is extensively used for preparing and growing III-V crystals. 

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