Single Czochralski growth

N. Miyazaki, S. Okuyama. Development of finite element computer program for dislocation density analysis of bulk semiconductor single crystals during Czochralski growth. J Cryst Growth 183 S, 1998. 

Czochralski seeded single-crystal growth from semiconductors stable as melts, which yields the meters-large single crystals of ultra-high purity silicon used in nearly all technological applications. 

Purified polycrystalline CVD silicon from this reaction is then melted and a single-crystal boule weighing as much or more than 50 kg, and having a diameter up to 20 cm, is pulled from the melt by Czochralski growth (8). Metallurgical-grade silicon is not sufficiendy pure for applications in electronics... 

Figure 3. Streamlines (on right) and isotherms (on left) for growth of Si in a prototype Czochralski system. The volume of the melt, at the bottom in each drawing, changes among the calculations, affecting the qualitative form of the convection cell and the shape of the crystal interface. From Theory of Transport Processes in Single Crystal Growth from the Melt, by R. A. Brown, AIChE Journal, Vol. 34, No. 6, pp. 881 -911, 1988 [29]. Reproduced by permission of the American Institute of Chemical Engineers copyright 1988 AIChE.

Sato, J., Takeda, H., Morikoshi, H., Shimamura, K, Rudolph, P. Fukuda, T. (1998). "Czochralski growth of REsGasSiOi4 (RE=La, Pr, Nd) single crystals for the analysis of the influence of rare earth substitution on piezoelectricity" /. Crystal Growth, 191, pp. 746-753. 

A list of references to single crystal growth of intermetallic compounds by the Czochralski method is given in table 7. 

Single crystal growth is achieved by the Czochralsky method, or the flat-zone method. The single crystals are sewn into wafers and further processed to give e.g. integrated circuits. 

Modelling dislocation generation in high pressure Czochralski growth of InP single crystals parts 1 and 11 , Model. SirmU. Mater. Sci. 

K. Kakimoto, M. Eguchi, H. Watanabe, and T. Hibiya, 1989, Natural and Forced Convection of Molten Silicon during Czochralski Single Crystal Growth , J. Cryst. Growth 94, 412—420. 

An example of an analysis done on polysilicon and single-crystal Czochralski silicon (CZ) is shown in Table 1. As can be seen, polysilicon, which was used to grow the crystal, is dirtier than the CZ silicon. This is expected, since segregation coefficients limit the incorporation of each element into the crystal boule during the crystal growth process. All values shown in the table are from bulk analysis. Table 2 shows NAA data obtained in an experiment where surface analysis was accom-... 

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