Silicon crystals growth

J. Jaervinen, R. Nieminen, T. Tiihonen. Time-dependent simulation of Czochralski silicon crystal growth. J Cryst Growth 750 468, 1997. 

Czochralski Silicon Crystal Growth for Photovoltaic Applications... 

W. von Ammon, in Silicon Crystal Growth, ed. by G. Muller, J-J. Meteois, P. Rudolph. Crystal Growth-From Fundamentals to Technology (Elsevier, Amsterdam, 2004)... 

The possibility of creating silicon lasers based on specific few-atomic structural imperfections of a silicon crystal is discussed. A simple model of basic electron processes in the active region of the laser crystal is proposed. Such lasers can operate in the energy range of 0.4 - 1.1 eV at temperatures less than 100 K. An improvement of the devices is related to elaboration of new subtle nanotechnology methods of a silicon crystal growth. 

Silicon is the most commonly used substrate for semiconductor wafers. It is heated with hydrogen chloride gas to form trichlorosilane. This is purified by reaction with hydrogen at high temperatures to form electronic grade silicon. Crystal growth requires a starter seed crystal placed at the end of a rod. The rod... 

Wang, Z. Brown, R.A. (2001). Simulation of almost defect-free silicon crystal growth. Journal Crystal Growth, Vol. 231, No. 2, pp. 442-452, ISSN 0022-0248. 

Asa protective atmosphere during the initial step of silicon crystal growth. 

Silicon crystal growth by the electromagnetic Czochralski (EMCZ) method"Jpn. J. Appl. Phys. 38, L10-L13. 

Fig. 10.2 The more open configuration of a silicon crystal growth system provides a clear view of the meniscus for an optical pyrometer.

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