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Preparation Czochralski technique

Single crystals of Ag8[W4016] have been obtained by the Czochralski technique. Starting material was prepared as described above. A 2.5-cm dia by... [Pg.78]

The next step is the hydrogen reduction of the trichlorosilane (Reaction 2 above). The end product is a poly crystalline silicon rod up to 200 mm in diameter and several meters in length. The resulting EGS material is extremely pure with less than 2 ppm of carbon and only a few ppb of boron and residual donors. The Czochralski pulling technique is used to prepare large single crystals of silicon, which are subsequently sliced into wafers for use in electronic devices.1 1... [Pg.223]

A continuous monocrystalline sapphire (A1203) fibre has been prepared as single-crystal fibres by LaBelle and Mlavsky using a modified czochralski puller and radio frequency heating. The technique adopted in this method is called edge-defined film-fed growth (EFG) [18-22], Figure 3.4 shows a schematic of the EFG method. [Pg.64]

See other pages where Preparation Czochralski technique is mentioned: [Pg.315]    [Pg.135]    [Pg.228]    [Pg.55]    [Pg.80]    [Pg.142]    [Pg.344]    [Pg.463]    [Pg.610]    [Pg.14]    [Pg.448]    [Pg.415]    [Pg.8]    [Pg.65]    [Pg.80]    [Pg.292]   
See also in sourсe #XX -- [ Pg.125 , Pg.228 ]



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