Crystal Czochralski growth

Bulk Crystal Growth Czochralski Bridgman Float zone... 

An example of an analysis done on polysilicon and single-crystal Czochralski silicon (CZ) is shown in Table 1. As can be seen, polysilicon, which was used to grow the crystal, is dirtier than the CZ silicon. This is expected, since segregation coefficients limit the incorporation of each element into the crystal boule during the crystal growth process. All values shown in the table are from bulk analysis. Table 2 shows NAA data obtained in an experiment where surface analysis was accom-... 

H. Kopetsch. A numerical method for the time-dependent Stefan-problem in Czochralski crystal growth. J Crystal Growth SS 71, 1988 H. Kopetsch. Phy-sico-Chem Hydrodyn 77 357, 1989 H. Kopetsch. J Cryst Growth 102 500, 1990. 

N. Miyazaki, S. Okuyama. Development of finite element computer program for dislocation density analysis of bulk semiconductor single crystals during Czochralski growth. J Cryst Growth 183 S, 1998. 

Y.-S. Lee, C.-H. Chun. Experiments on the oscillatory convection of low Prandtl number hquid in Czochralski configuration for crystal growth with cusp magnetic field. J Cryst Growth 180 411, 1997. 

J. Jaervinen, R. Nieminen, T. Tiihonen. Time-dependent simulation of Czochralski silicon crystal growth. J Cryst Growth 750 468, 1997. 

Vessels for Czochralski crystal growth of III-V and II-VI compounds (i.e., gallium arsenide). 

List the ways that one ean obtain a "seed" crystal. Is it possible to use one t37pe of crystal-growth method to obtain a seed crystal for Czochralski growth ... 

Czochralski seeded single-crystal growth from semiconductors stable as melts, which yields the meters-large single crystals of ultra-high purity silicon used in nearly all technological applications. 

T. Inada and T. Fukuda, Direct Synthesis and Growth of Indium Phosphide by the Liquid Phosphorous Encapsulated Czochralski Method O. Oda, K. Katagiri, K. Shinohara, S. Katsura, Y. Takahashi, K. Kainosho, K. Kohiro, and R. Hirano, InP Crystal Growth, Substrate Preparation and Evaluation K. Tada, M. Tatsumi, M. Morioka, T. Araki, and T. Kawase, InP Substrates Production and Quality Control... 

The figure on the inner front cover of this book can be used to convert between doping density, carrier mobility and resistivity p for p- or n-type doped silicon substrates. One of the major contaminants in silicon is oxygen. Its concentration depends on the crystal growth method. It is low in FZ material and high (about 1018 cm-3) in Czochralski (CZ) material. 

Figure 3.6 Methods for crystal growth from melt (a) Czochralski method (b) Kyropoulos method (c) Bridgman-Stockbarger method and (d) Vemeuil method.

Overview of Unit Operations. To maximize the electron or hole (carrier) mobility and thus device speed, ICs are built in single-crystal substrates. Methods of bulk crystal growth are therefore needed. The most common of these methods are the Czochralski and float-zone techniques. The Czochralski technique is a crystal-pulling or melt-growth method, whereas the float-zone technique involves localized melting of a sintered bar of the material, followed by cooling and, thus, crystallization. 

Figure 1. Schematic diagrams of several commonly used systems for melt crystal growth of electronic materials (a) vertical Bridgman, (b) Czochralski, and (c) small-scale floating-zone systems.

Meniscus-Defined Crystal Growth Systems. In most conventional meniscus-defined growth systems, a seed crystal is dipped into a pool of melt, and the thermal environment is varied so that a crystal grows from the seed as it is pulled slowly out of the pool. Two examples of meniscus-defined growth are shown in Figure 1. The Czochralski (CZ) method (Figure lb) and the closely related liquid-encapsulated Czochralski (LEC) method are batchwise processes in which the crystal is pulled from a crucible with... 

Figure 6. Schematic of driving forces for flows in Czochralski crystal growth system, which shows the regions where the driving forces will produce the strongest motions. The shape functions describing the unknown interface shapes are listed also.

Czochralski Crystal Growth Case Study of Meniscus-Defined Growth System... 

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