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Czochralski crystal growth crucible material

In the Czochralski method, the material is heated in a crucible just above its melting point. A seed crystal is immersed in the melt and it is slowly pulled out (5mm/min) from the melt vertically while being slowly twisted (2-20 rpm), resulting in continuous growth at the interface. The system is within a chamber with argon to avoid contamination. [Pg.17]


See other pages where Czochralski crystal growth crucible material is mentioned: [Pg.480]    [Pg.260]    [Pg.230]    [Pg.230]    [Pg.41]    [Pg.55]    [Pg.131]    [Pg.795]    [Pg.40]    [Pg.154]    [Pg.23]    [Pg.1367]    [Pg.654]    [Pg.19]   
See also in sourсe #XX -- [ Pg.83 ]




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