Semiconductor, complementary metal

Main memories almost exclusively consist of semiconductors on a siUcon basis in complementary metal oxide semiconductor technology (CMOS). The most important types are the pure read only memory (ROM) and the write/read memory (RAM = random access memory), which is available as S-RAM (static RAM) or as D-RAM (dynamic RAM). 

Nanocrystals are receiving significant attention for nano-electronics application for the development of future nonvolatile, high density and low power memory devices [1-3]. In nanocrystal complementary metal oxide semiconductor (CMOS) memories, an isolated semiconductor island of nanometer size is coupled to the channel of a MOS field effect transistor (MOSFET) so that the charge trapped in the island modulates the threshold voltage of the transistor (Fig. 1). 

Complementary assets, 24 365 Complementary Metal Oxide Semiconductors (CMOS). 

CMOS complementary metal oxide semiconductor CMP chemomechanical polishing... 

M. Graf, D. Barrettino, S. Taschini, C. Hagleitner, A. Hierlemann, and H. Baltes. Metal-Oxide-Based Monohthic Complementary Metal Oxide Semiconductor Gas Sensor Microsystem , Analytical Chemistry 76 (2004), 4437-4445. 

NMOS and PMOS (p-channel MOS) transistors are used side by side in complementary metal-oxide-semiconductor (CMOS) technology to form logic elements. These structures have the advantage of extremely low power consumption and are important in ultralarge-scale integration (ULSI) and very-large-scale integration (VLSI) (13). 

CMOS Complementary metal oxide semiconductor CVD Chemical vapor deposition... 

Moreover, since the process is completely complementary metal oxide semiconductor (CMOS) compatible, more complex systems can be developed, with a large variety of components as different as valves, coolers, and photodetectors. 

Papadatos, E, Consiglio, S., Skordas, S., Eisenbraun, E. T., Kaloyeros, A. E., Peck, J., Thompson, D. and Hoover, C. (2004), Chemical vapor deposition of ruthenium and ruthenium oxide thin films for advanced complementary metal-oxide semiconductor gate electrode applications. J. Mater. Res., 19(10) 2947-2955. 

Chatterjee A, Ali I, Joyner K, Mercer D, Kuehne J, Mason M, Esuivel A, Rogers D, O Brien S, Mei P, Murtaza S, Kwok SP, Taylor K, Nag S, Hames G, Hanratty M, Marchman H, Ashburn S, Chen I-C. Integration of unit processes in a shallow trench isolation module for a 0.25 pm complementary metal-oxide semiconductor technology. J Vac Sci Technol 1997 B15(6) 1936-1942. 

Kim et al. [20] studied the effectiveness of CMP on 0.18-pm complementary metal-oxide semiconductor (CMOS) shallow trench isolation using Ce02-based... 

Kim S, Hwang I, Park H, Rhee J. Chemical mechanical polishing of shallow trench isolation using the ceria-based high selectivity slurry for sub-0.18 pm complementary metal-oxide-semiconductor fabrication. J Vac Sci Technol B 2003 20 918-923. 

In particular, computer memories based on complementary metal oxide semiconductor devices (C-MOS) require a little more than 3 V to... 

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