Complementary metal oxide-semiconductor CMOS technology

NMOS and PMOS (p-channel MOS) transistors are used side by side in complementary metal-oxide-semiconductor (CMOS) technology to form logic elements. These structures have the advantage of extremely low power consumption and are important in ultralarge-scale integration (ULSI) and very-large-scale integration (VLSI) (13). 

With the advanced development of complementary metal-oxide-semiconductors (CMOS) technology, large-scale integration (LSI) makes the parallel multi-point bio-sensing possible. The working electrodes and reference electrodes of amperometric sensor are able to be integrated on a tiny chip (e.g., 10.4 x 10.4 mm) on... 

The PSi layers can be further covered with other thin films, by such as epitaxy processes, which are widely employed in complementary metal oxide-semiconductor (CMOS) technologies. 

Once a measnrement system is developed, the marginal costs associated with large-scale production become relatively low. To fnlly appreciate the full extent of this point, note that standard complementary metal-oxide semiconductor (CMOS) technology allows integrating millions of fnnctional components on a mass-produced chip at a cost of only a few dollars. 

Some metallic silicides have played an important role in the development of the microelectronics industry, such as PtSi, and several others are used in complementary metal oxide semiconductor (CMOS) technologies, notably TiSi2,CoSi2 and NiSi, providing ohmic contact, interconnect, gate, and diffusion barriers because of their excellent conductivity and their overall compatibility with Si technology. 

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