Mechanical polishing, chemical

Researchers in Japan have determined that copper interconnects deposited by metallo-organic chemical vapor deposition (MOCVD), then followed by chemical mechanical polishing, provides sub-quarter-micron interconnects and can be achieved on a production basis. Titanium nitride and borophosphosilicate glass provide effective barriers against copper diffusion.PL[H]... 

Electric chemical polish (ECP) and electric chemical mechanical polish (ECMP) [53] have been developed as promising methods for global planarization of LSI fabrication and abrasive-free polish. 

The solid-liquid two-phase flow is widely applied in modern industry, such as chemical-mechanical polish (CMP), chemical engineering, medical engineering, bioengineering, and so on [80,81]. Many research works have been made focusing on the heat transfer or transportation of particles in the micro scale [82-88], In many applications, e.g., in CMP process of computer chips and computer hard disk, the size of solid particles in the two-phase flow becomes down to tens of nanometres from the micrometer scale, and a study on two-phase flow containing nano-particles is a new area apart from the classic hydrodynamics and traditional two-phase flow research. In such an area, the forces between particles and liquid are in micro or even to nano-Newton scale, which is far away from that in the traditional solid-liquid two-phase flow. 

Borst, C. L., Gill, W. N., and Gutmann, R. J., Chemical-Mechanical Polishing of Low Dielectric Constant Polymers and Organosilicate Glasses, Boston Kluwer Academic Publishers, 2002, pp. 1-5. 

Bielmann, M., Mahajan, U., and Singh, R. K., "Effect of Particle Size During Tungsten Chemical Mechanical Polishing, Electrochem. Solid-State Lett., Vol. 2,1999, pp. 401 03. 

Zhou, C. H., Shan, L., and Hight, R., "Influence of Colloidal Abrasive Size on Material Removal Rate and Surface Finish in Si02 Chemical Mechanical Polishing, Tribol. Trans., Vol. 45,2002, pp. 232-230. 

Li, S. H. and Miller, R., Chemical Mechanical Polishing in Silicon Processing, Semiconductor Semimet., Vol. 63, New York Academic Press, 2000. 

Ma, J. J., Experimental Research on Chemical Mechanical Polishing of Computer Hard Disk," Master Thesis, Tsing-hua University, Beijing, China, 2003. 

Lei, S., Mechanical Interactions at the Interface of Chemical Mechanical Polishing, Ph.D. Thesis, Georgia Institute of Technology, 2000. 

Zhao, Y., and Change, L., A Micro-Contact and Wear Model for Chemical-Mechanical Polishing, Wear, Vol. 252, 2002,... 

Asare, O. K. and Khan, A., "Chemical-Mechanical Polishing of Tungsten An Electrophoretic Mobility Investigation of Alumina-Tungstate Interactions, Electrochemical Society Proceedings,Vol.1,1998,pp. 138-144. 

Steigerwald, J., Zirpoli, R., Myrarka, S., et al., Metal Dishing and Erosion in the Chemical-Mechanical Polishing of Copper Used for Patten Delineation, Materials Research Society Symposium Proceedings, ULSI-X, 1995, pp. 55-59. 

Li, Y. and Babu, S. V, Chemical Mechanical Polishing of Copper and Tantalum in Potassium lodate-Based Slurries," Electrochem. Solid-State Lett., Vol. 4, No. 2, 2001, pp. G20-G22. 

Ali, I., Chemical-Mechanical Polishing of Interlayer Dielectric A Review," Solid State Technol., Vol. 34, 1994, pp. 63-70. 

Luo, J. B. and Pan, G. S., Variations of the Surface Layer during Chemical Mechanical Polish," Indo-Chinese Workshop on MEMS Devices and Related Technologies, New Delhi, India, April 5-7,2006. 

Cho, C. H., Park, S. S., andAhn, Y, Three-Dimensional Wafer Scale Hydrodynamic Modeling for Chemical Mechanical Polishing," Thin Solid Films, Vol. 389,2001, pp. 254-260. 

Zhao, Y. W., Chang, L., and Kim, S. H., "A Mathematical Model for Chemical-Mechanical Polishing Based on Formation and Removal of Weakly Bonded Molecular Species, Wear, Vol. 254,2003, pp. 332-339. 

Nanz, G. and Camilletti, L. E., Modeling of Chemical-Mechanical Polishing A Review," IEEE Trans. Semicond. Manuf.Vol.S, 1995, pp. 382-389. 

Ahmadi, G. and Xia, X., "A Model for Mechanical Wear and Abrasive Particle Adhesion During the Chemical Mechanical Polishing Process," Journal of the Electrochemical Society, Vol. 148, No. 3,2001, pp. G99-G109. 

Moon, Y, "Mechanical Aspect of the Material Removal Mechanism in Chemical Mechanical Polishing," Ph.D. The-... 

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