Complementary metal-oxide semiconductor technology

Main memories almost exclusively consist of semiconductors on a siUcon basis in complementary metal oxide semiconductor technology (CMOS). The most important types are the pure read only memory (ROM) and the write/read memory (RAM = random access memory), which is available as S-RAM (static RAM) or as D-RAM (dynamic RAM). 

Chatterjee A, Ali I, Joyner K, Mercer D, Kuehne J, Mason M, Esuivel A, Rogers D, O Brien S, Mei P, Murtaza S, Kwok SP, Taylor K, Nag S, Hames G, Hanratty M, Marchman H, Ashburn S, Chen I-C. Integration of unit processes in a shallow trench isolation module for a 0.25 pm complementary metal-oxide semiconductor technology. J Vac Sci Technol 1997 B15(6) 1936-1942. 

CMOS Complementary Metal Oxide Semiconductor technology, combi-... 

In CMOS (complementary metal-oxide-semiconductor) technology, the p-channel is fabricated by ion implantation. Using this technique, 5% control in the doping is possible and the threshold control is improved. 

CMOS Complementary metal oxide semiconductor technology... 

NMOS and PMOS (p-channel MOS) transistors are used side by side in complementary metal-oxide-semiconductor (CMOS) technology to form logic elements. These structures have the advantage of extremely low power consumption and are important in ultralarge-scale integration (ULSI) and very-large-scale integration (VLSI) (13). 

Miniaturization of electronic devices in integrated circuits (ICs) has both technological and physical limits. Since 30-40 years only a semiconductor technology, mostly the CMOS FET (complementary metal-oxide-semiconductor field effect transistor) and the TTL (transistor-transistor logic) technologies are used for fabrication of integrated circuits in the industrial scale. Probably the CMOS technology will be used at least in the next 10-15 years. 

Active sensors require an external power supply for operation. This is the 5 or 12 V system of the ECU. The main technologies are the complementary metal-oxide semiconductor Hall-effect transducers (CMOS-Hall) or AMR (anisotropic magnetoresistive effect) plus silicon amplification [3],... 

It then addresses the micro-hotplates concept that has led to the development of different types of micromachined gas sensor devices. The different reahzations of micromachined semiconductor gas sensors are presented thin- and thick-film metal-oxide, field effect, and those using complementary metal-oxide semiconductors (CMOSs) and silicon-on-insulator (SOI) technologies. Finally, recent developments based on gas sensitive nanostructures, polymers, printing and foil-based technologies are highlighted. 

With the advanced development of complementary metal-oxide-semiconductors (CMOS) technology, large-scale integration (LSI) makes the parallel multi-point bio-sensing possible. The working electrodes and reference electrodes of amperometric sensor are able to be integrated on a tiny chip (e.g., 10.4 x 10.4 mm) on... 

In the main there are two kinds of technologies for digital color cameras, the CCD (Charged Coupled Device) and the CMOS (Complementary Metal Oxide Semiconductor). While CCD cameras deliver images with a better quality and are more sensitive for low emittance, CMOS cameras are often used as high-speed cameras. Today, common CMOS high-speed cameras are able to record up to 32,000 images in a second. 

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