Complementary metal oxide semiconductor field effect

Miniaturization of electronic devices in integrated circuits (ICs) has both technological and physical limits. Since 30-40 years only a semiconductor technology, mostly the CMOS FET (complementary metal-oxide-semiconductor field effect transistor) and the TTL (transistor-transistor logic) technologies are used for fabrication of integrated circuits in the industrial scale. Probably the CMOS technology will be used at least in the next 10-15 years. 

There is a case when the SIMS and APT curves differ. It is when the point of interest is inside or close to an interlayer. Some examples are for implanted As that is enriched in the Si/oxide interface by annealing, the complementary dip in concentration (i.e.. some nanometers inside the Si) is not seen by SIMS but by APT [391] a shallow boron implant after annealing yields higher concentrations of B near the surface via SIMS than by APT measurement [391] and the perceived elevated Ge concentration within a SiGe/Si interface is much higher in APT than in SIMS (14% vs. 8.5%) [360], Another instance is the segregation of Pt in Ni(E %) Si contacts as used in nano-metal oxide semiconductor field-effect transistors (MOSFETs) [397], After deposition of Ni(Pt5%) onto Si and subsequent heat treat-... 

Nanocrystals are receiving significant attention for nano-electronics application for the development of future nonvolatile, high density and low power memory devices [1-3]. In nanocrystal complementary metal oxide semiconductor (CMOS) memories, an isolated semiconductor island of nanometer size is coupled to the channel of a MOS field effect transistor (MOSFET) so that the charge trapped in the island modulates the threshold voltage of the transistor (Fig. 1). 

It then addresses the micro-hotplates concept that has led to the development of different types of micromachined gas sensor devices. The different reahzations of micromachined semiconductor gas sensors are presented thin- and thick-film metal-oxide, field effect, and those using complementary metal-oxide semiconductors (CMOSs) and silicon-on-insulator (SOI) technologies. Finally, recent developments based on gas sensitive nanostructures, polymers, printing and foil-based technologies are highlighted. 

The source and drain are both p-type if the current flowing is holes. Surface field effect transistors have become the dominant type of transistor used in integrated circuits, which can contain up to one billion transistors plus resistors, capacitors, and the very thinnest of deposited connection wires made from aluminum, copper, or gold. The field effect transistors are simpler to produce than junction transistors and have many fevorable electrical characteristics. The names of various field effect transistors go by the abbreviations MOS (metal-oxide semiconductor), PMOS (p-type metal-oxide semiconductor), NMOS (n-type metal-oxide semiconductor), CMOS (complementary metal-oxide semiconductor—uses both p-type unipolar and n-type unipolar). 

---