Complementary metal-oxide-semiconductor Transistors

Khanna, V.K. (2004) Emerging Trends in Ultra-miniaturized CMOS (Complementary Metal-Oxide-Semiconductor) Transistors, Single-Electron and Molecular-Scale Devices ... 

Trenkler, T., P. De Wolf, W. Vandervorst, and L. Hellemans. 1998. Nanopotentiometry Local potential measurements in complementary metal-oxide-semiconductor transistors using atomic force microscopy. J. Vac. Sci. Technol, B 16 367-372. 

Nanocrystals are receiving significant attention for nano-electronics application for the development of future nonvolatile, high density and low power memory devices [1-3]. In nanocrystal complementary metal oxide semiconductor (CMOS) memories, an isolated semiconductor island of nanometer size is coupled to the channel of a MOS field effect transistor (MOSFET) so that the charge trapped in the island modulates the threshold voltage of the transistor (Fig. 1). 

NMOS and PMOS (p-channel MOS) transistors are used side by side in complementary metal-oxide-semiconductor (CMOS) technology to form logic elements. These structures have the advantage of extremely low power consumption and are important in ultralarge-scale integration (ULSI) and very-large-scale integration (VLSI) (13). 

Miniaturization of electronic devices in integrated circuits (ICs) has both technological and physical limits. Since 30-40 years only a semiconductor technology, mostly the CMOS FET (complementary metal-oxide-semiconductor field effect transistor) and the TTL (transistor-transistor logic) technologies are used for fabrication of integrated circuits in the industrial scale. Probably the CMOS technology will be used at least in the next 10-15 years. 

The likelihood that a component will be damaged increases with the increasing use of Complementary Metal Oxide Semiconductor (CMOS) chips, because these chips contain a thin metal oxide layer that is hypersensitive to ESD. The previous generation s Transistor-Transistor Logic (TTL) chips are actually more robust than the newer CMOS chips because they don t contain this metal oxide layer. Most of today s ICs are CMOS chips, so there is more of a concern with ESD lately. 

The source and drain are both p-type if the current flowing is holes. Surface field effect transistors have become the dominant type of transistor used in integrated circuits, which can contain up to one billion transistors plus resistors, capacitors, and the very thinnest of deposited connection wires made from aluminum, copper, or gold. The field effect transistors are simpler to produce than junction transistors and have many fevorable electrical characteristics. The names of various field effect transistors go by the abbreviations MOS (metal-oxide semiconductor), PMOS (p-type metal-oxide semiconductor), NMOS (n-type metal-oxide semiconductor), CMOS (complementary metal-oxide semiconductor—uses both p-type unipolar and n-type unipolar). 

Solid state logic refers to the transistor family of components like Complementary Metal Oxide Semiconductor (CMOS), Resistor-Transistor Logic (RTL), Transistor-Transistor Logic (TTL), and High Noise Immunity Logic (HNIL). These components are assembled in stand-alone modules, plug-in board... 

Transistor-transistor logic and complementary metal oxide semiconductor (CMOS) power dissipation depend on frequency and increase dramatically at high frequencies. 

The element below carbon in the periodic table is that of silicon. When purified from sand (one source), this is the basis of the solid-state semiconductor industry, as we know it today. Indeed, owing to the increasing prevalence of Complementary Metal Oxide Semiconductor (CMOS)-based integrated circuits and the ever-decreasing size of the transistor (over a billion transistors can now be squeezed into a single cm-by-cm-sized chip), more silicon-based transistors have been manufactured than anything else summed over the entire history of mankind. 

The typical thin films that are deposited include semiconductors (e.g., polysilicon), insulators (e.g., silicon nitride), and metals (e.g., aluminum). In addition, some layers are grown (oxide), diffused, or implanted (dopants) rather than deposited using thin-film techniques. A cross section of a complementary metal oxide semiconductor (CMOS) process that includes six levels of metal is shown in Figure 1.2 [1]. A schematic diagram of one of the first MEMS devices, which used semiconductor processing for fabrication, the resonant gate transistor, is shown in Figure 1.3 [2]. 

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