Devices memory

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Membrane transport Memory Memory banks Memory device Memory-enhancing drug Memory-impairment Memory protection Memory storage device Memory systems Menadione... 

The design of shape-memory devices is quite different from that of conventional alloys. These materials are nonlinear, have properties that are very temperature-dependent, including an elastic modulus that not only increases with increasing temperature, but can change by a large factor over a small temperature span. This difficulty in design has been addressed as a result of the demands made in the design of compHcated smart and adaptive stmctures. Informative references on all aspects of SMAs are available (7—9). 

Other. Alkali chiorochromate compounds, including cesium chiorochromate, CsCrCl, are ferromagnetic substances being studied for potential apphcation in optically-read computer memory devices. Cesium has also been used in vapor glow lamps (44), vapor rectifiers, and high energy lasers (qv)... 

Polyimides, both photodefinable and nonphotodefinable, are coming iato iacreased use. AppHcatioas iaclude planarizing iatedayer dielectrics oa iategrated circuits and for interconnects, passivation layers, thermal and mechanical stress buffers ia packagiag, alpha particle barriers oa memory devices, and ion implantation (qv) and dry etching masks. 

Nanocrystals are receiving significant attention for nano-electronics application for the development of future nonvolatile, high density and low power memory devices [1-3]. In nanocrystal complementary metal oxide semiconductor (CMOS) memories, an isolated semiconductor island of nanometer size is coupled to the channel of a MOS field effect transistor (MOSFET) so that the charge trapped in the island modulates the threshold voltage of the transistor (Fig. 1). 

New natural polymers based on synthesis from renewable resources, improved recyclability based on retrosynthesis to reusable precursors, and molecular suicide switches to initiate biodegradation on demand are the exciting areas in polymer science. In the area of biomolecular materials, new materials for implants with improved durability and biocompatibility, light-harvesting materials based on biomimicry of photosynthetic systems, and biosensors for analysis and artificial enzymes for bioremediation will present the breakthrough opportunities. Finally, in the field of electronics and photonics, the new challenges are molecular switches, transistors, and other electronic components molecular photoad-dressable memory devices and ferroelectrics and ferromagnets based on nonmetals. 

Nickel complexes with the dmid ligand are also less recognized in research. A conductivity as high as 10-2 Scm-1 was reached with (Et4N)o.i7[Ni(dmid)2].1036 (Bu4N)x[Ni(dmid)2] complexes have been studied by XPS and for applications in electrical switching and memory devices.1 7,1038... 

Recent developments in polymer chemistry have allowed for the synthesis of a remarkable range of well-defined block copolymers with a high degree of molecular, compositional, and structural homogeneity. These developments are mainly due to the improvement of known polymerization techniques and their combination. Parallel advancements in characterization methods have been critical for the identification of optimum conditions for the synthesis of such materials. The availability of these well-defined block copolymers will facilitate studies in many fields of polymer physics and will provide the opportunity to better explore structure-property relationships which are of fundamental importance for hi-tech applications, such as high temperature separation membranes, drug delivery systems, photonics, multifunctional sensors, nanoreactors, nanopatterning, memory devices etc. 

Such techniques could, in principle, be used to produce an entire memory device (Figure 9). The possible steps involved are explained in Table III, together with some of the general advantages... 

Figure 9. Schematic representation of an MOS non-volatile memory device and its components.

Table III. Components of an MOS Non-volatile Memory Device and Their Methods of Fabrication...

There is considerable interest in developing new types of magnetic materials, with a particular hope that ferroelectric solids and polymers can be constructed— materials having spontaneous electric polarization that can be reversed by an electric field. Such materials could lead to new low-cost memory devices for computers. The fine control of dispersed magnetic nanostructures will take the storage and tunability of magnetic media to new levels, and novel tunneling microscopy approaches allow measurement of microscopic hysteresis effects in iron nanowires. 

Kahn and Martinez (1998) Spin transition polymers from molecular materials toward memory devices [17]. 

Research on Fe(II) 1,2,4-triazole polynuclear SCO complexes has undergone renewed activity over the last ten years since their potential for being incorporated in memory devices and displays was outlined by Kahn in collaboration with an industrial partner [7]. Towards this end, spin transition (ST) materials showing wide hysteresis effects around room temperature along with thermochromic behaviour are currently being sought [8]. 

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