Complementary metal oxide semiconductor CMOS circuit

Organic semiconductors are used in many active devices. Many can be processed in solution and can therefore be printed. The charge transport properties largely depend on the deposition conditions, which are influenced by the nse of solvents, the deposition technique, concentration, interfaces and so on. Most of the organic semiconductors used today are p-type (e.g., pentacene and polythiophene), but the first n-type materials have also become available and these mean that complementary metal-oxide-semiconductor (CMOS) circuits can now be fabricated. 

The element below carbon in the periodic table is that of silicon. When purified from sand (one source), this is the basis of the solid-state semiconductor industry, as we know it today. Indeed, owing to the increasing prevalence of Complementary Metal Oxide Semiconductor (CMOS)-based integrated circuits and the ever-decreasing size of the transistor (over a billion transistors can now be squeezed into a single cm-by-cm-sized chip), more silicon-based transistors have been manufactured than anything else summed over the entire history of mankind. 

Miniaturization of electronic devices in integrated circuits (ICs) has both technological and physical limits. Since 30-40 years only a semiconductor technology, mostly the CMOS FET (complementary metal-oxide-semiconductor field effect transistor) and the TTL (transistor-transistor logic) technologies are used for fabrication of integrated circuits in the industrial scale. Probably the CMOS technology will be used at least in the next 10-15 years. 

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