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Semiconductor, complementary metal Sensitivity

Lange, D., Hagleitner, C., Hierlemann, A., Brand, O., and Baltes, H. (2002). Complementary metal oxide semiconductor cantilever arrays on a single chip Mass-sensitive detection of volatile organic compounds. Anal. Chem. 74,3084-3095. [Pg.210]

It then addresses the micro-hotplates concept that has led to the development of different types of micromachined gas sensor devices. The different reahzations of micromachined semiconductor gas sensors are presented thin- and thick-film metal-oxide, field effect, and those using complementary metal-oxide semiconductors (CMOSs) and silicon-on-insulator (SOI) technologies. Finally, recent developments based on gas sensitive nanostructures, polymers, printing and foil-based technologies are highlighted. [Pg.220]

In the main there are two kinds of technologies for digital color cameras, the CCD (Charged Coupled Device) and the CMOS (Complementary Metal Oxide Semiconductor). While CCD cameras deliver images with a better quality and are more sensitive for low emittance, CMOS cameras are often used as high-speed cameras. Today, common CMOS high-speed cameras are able to record up to 32,000 images in a second. [Pg.442]

Kummer AM, Hierlemann A, Baltes H (2004) Tuning sensitivity and selectivity of complementary metal oxide semiconductor-based capacitive chemical microsensors. Anal Chem 76 2470-2477 Lakowicz JR (1999) Principles of fluorescence spectroscopy, 2nd edn. Kluwer Academic/Plenum, New York LambeckPV (1992) Integrated opto-chemical sensors. Sens Actuators B 8 103-116... [Pg.44]

Lange D, Hagleitner C, Hierlemann A, Brand O, Baltes H (2002) Complementary metal oxide semiconductor cantilever arrays on a single chip mass-sensitive detection of volatile oigrmic compounds. Anal Chem 74 3084-3095 Lange U, Roznyatovskaya NV, Mirsky VM (2008) Conducting polymers in chemical sensors and arrays. Anal Chim Acta 614 1-26... [Pg.149]

The object of semiconductor lithography is to transfer patterns of ICs drawn on the mask or reticle to the semiconductor wafer substrate. The transfer is carried out by projecting the image of the reticle with the aid of appropriate optical elements of an exposure tool onto a radiation-sensitive resist material coated on the semiconductor wafer, typically made of silicon, and stepping the imaging field across the entire wafer to complete a layer. The shape of the IC pattern transferred to the wafer substrate is dependent entirely on the wafer layer being patterned. Examples of patterns include gates, isolation trenches, contacts, metal interconnects, and vias to interconnect metal layers. An advanced CMOS (complementary... [Pg.463]

Because of its sensitivity to the top layer of the surface, ISS has proven very useful in providing surface compositional analysis of materials such as catalysts and alloys. ISS can also provide structural information on metal, semiconductor, metal o.vidc, and adsorbate surfaces. The major limitations of ISS are associated with difficulties in providing quantitative results, because of neutralization reactions and other interactions. Collisional processes and inelastic energy losses also make absolute mass determinations difficult. In compositional analysis, ISS is complementary to AES although not as generally applicable. [Pg.310]


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See also in sourсe #XX -- [ Pg.285 ]




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Complementariness

Complementary

Metal sensitizers

Semiconductor Sensitivity

Semiconductor metals

Semiconductor sensitization

Semiconductor, complementary metal

Semiconductors metallicity

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