Plasma enhanced chemical vapor

PECVD. See Plasma-enhanced chemical vapor deposition. 

Marks, J., Witty, D., Short, A., Laford, W., and Nguyen, B., Properties of High Quality Nitride Films by Plasma Enhanced Chemical Vapor Deposition, Proc. 11th. Int. Conf. on CVD, (K. Spear and G. Cullen, eds.), pp. 368-373, Electrochem. Soc., Pennington, NJ 08534 (1990)... 

Tsu, D. V., and Lucovsky, G., Silicon Nitride and Silicon Diimide Grown by Remote Plasma Enhanced Chemical Vapor Deposition, J. Vac. Set. Technol. A, 4(3-1 ) 480-485 (May-June 1986)... 

DEC coating was first prepared by Aisenberg and Chabot using ion beam deposition in 1971 [2]. At present, PVD, such as ion beam deposition, sputtering deposition, cathodic vacuum arc deposition, pulsed laser deposition, and CVD, like plasma enhanced chemical vapor deposition are the most popular methods to be selected to fabricate DEC coatings. 

At the end of last century, a near frictionless carbon (NFC) coating was reported, which is practically hydrogen contained DLC film grown on steel and sapphire substrates using a plasma enhanced chemical vapor deposition (PECVD) system [50]. By using a ball on a disk tribo-meter, a super low friction coefficient of 0.001-0.003 between the films coated on both the ball and the disk was achieved [50]. A mechanistic model was proposed that carbon atoms on the surface are partially di-hydrogenated, resulting in the chemical inertness of the surface. Consequently, adhesive interaction becomes weak and super low friction is achieved [22],... 

Prakash, G. V., Cazzanell, M., Gaburro, Z., Pavesi, L., lacona, F., Franzo, G. and Priolo, F. (2002) Nonlinear optical properties of silicon nanocrystals grown by plasma-enhanced chemical vapor deposition. /. Appl. Phys., 91, 4607 610. 

The radio-frequency glow-discharge method [30-34] has been the most used method in the study of a-C H films. In this chapter, it is referred to as RFPECVD (radio frequency plasma enhanced chemical vapor deposition). Film deposition by RFPECVD is usually performed in a parallel-plate reactor, as shown in Figure 1. The plasma discharge is established between an RF-powered electrode and the other one, which is maintained at ground potential. The hydrocarbon gas or vapor is fed at a controlled flow to the reactor, which is previously evacuated to background pressures below lO"" Torr. The RF power is fed to the substrate electrode... 

Dimitrios Maroudas, Modeling of Radical-Surface Interactions in the Plasma-Enhanced Chemical Vapor Deposition of Silicon Thin Films Sanat Kumar, M. Antonio Floriano, and Athanassiors Z. Panagiotopoulos, Nanostructured Formation and Phase Separation in Surfactant Solutions Stanley I. Sandler, Amadeu K. Sum, and Shiang-Tai Lin, Some Chemical Engineering Applications of Quantum Chemical Calculations... 

The amorphous silicon tandem solar cells consisted of three n-i-p a-Si H cells grown by plasma-enhanced chemical vapor deposition (PECVD) [126]. The a-Si H cell area was 0.5 cm2. 

The other platform is dielectrics, for example, silicon dioxide, silicon nitride, silicon oxynitride, tantalum pentoxide, and titanium dioxide. They can be deposited by various methods, such as plasma-enhanced chemical vapor deposition, thermal evaporation, electron-beam evaporation, and sputtering. There are a number of dielectrics with refractive indices ranging from 1.45 to 2.4, facilitating diverse waveguide designs to satisfy different specification. Dielectrics have two other... 

Chemical vapor deposition (CVD) process, 5 803-813,13 386 16 173, 531 17 209 22 129 23 7, 59 24 743-744 25 373. See also CVD entries Plasma-enhanced chemical vapor deposition (PECVD) Vapor deposition catalyzed, 26 806 ceramics and, 5 663 common precursors and corresponding thin films grown, 5 805t in compound semiconductor processing, 22 188, 189... 

Epitaxial Silicon Wafers using Plasma-enhanced Chemical-Vapor-Deposition 291... 

In the Development stage, detailed product design is carried out. This is the key step for the chemical vapor deposition of thin silicon films. As described in the next section, to obtain uniform thin films rapidly, it is desirable to optimize the design of the plasma-enhanced, chemical-vapor-deposition (PECVD) reactor. 

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